@inproceedings{0f81a18565844f4497354c68fe9bcdfc,
title = "High yield, high drain current oxide TFTs for display manufacturing",
abstract = "We report the high drain current amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with excellent performance uniformity by using bulk accumulation (BA) mode. In our previous papers, the optimization conditions for BA mode were found to be thin and low density of states in the gap of active layer, low interface state density between IGZO and gate insulator. The instabilities such as positive bias-stress, high current stress and hysteresis are studied for these TFTs and have a conclusion that highly stable a-IGZO TFT with exceeding effective mobility over 50 cm2/Vs can be achieved. The high performance TFTs could be applied to high yield and fast response integrated gate drivers for AMOLED and AMLCD.",
keywords = "Bulk accumulation, Dual gate, InGaZnO, Integrated gate driver, Thin film transistor (TFT)",
author = "Suhui Lee and Um, \{Jae Gwang\} and Di Geng and Jin Jang",
note = "Publisher Copyright: {\textcopyright} 2016 Society for Information Display. All rights reserved. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.; 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 ; Conference date: 07-12-2016 Through 09-12-2016",
year = "2016",
language = "English",
series = "23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016",
publisher = "Society for Information Display",
pages = "25--28",
booktitle = "23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016",
}