Abstract
We report the high drain current amorphous iitdium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with excellent performance uniformity by using bulk accumulation (BA) mode. In our previous papers, the optimization conditionsfor BA mode were found to be thin and low density of states in the gap of active layer, low interface state density between IGZO and gate insulator. The instabilities such as positive bias-stress, high current stress and hysteresis are studied for these TFTs and have a conclusion that highly stable a-IGZO TFT with exceeding effective mobility over 50 crrf/Vs can be achieved. The high performance TFTs could be applied to high yield and fast response integrated gate drivers for AMOLED andAMLCD.
| Original language | English |
|---|---|
| Title of host publication | 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 |
| Publisher | Society for Information Display |
| Pages | 775-778 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781510845510 |
| Publication status | Published - 2016 |
| Event | 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 - Fukuoka, Japan Duration: 7 Dec 2016 → 9 Dec 2016 |
Publication series
| Name | 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 |
|---|---|
| Volume | 2 |
Conference
| Conference | 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 |
|---|---|
| Country/Territory | Japan |
| City | Fukuoka |
| Period | 7/12/16 → 9/12/16 |
Bibliographical note
Publisher Copyright:© 2016 The Society for Information Display.
Keywords
- Bulk accumulation
- Dual gate
- Ingazno
- Integrated gate driver
- Thin film transistor (TFT)
Fingerprint
Dive into the research topics of 'High yield, high drain current oxide TFTs for display manufacturing'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver