Abstract
We report a high efficiency inverted red indium phosphide (InP) based quantum dot light-emitting diode (QLED) by optimizing charge balance and suppressing interfacial exciton quenching process. Our optimized red InP-QLED using new deep HOMO level and high mobility hole transport layers and sol-gel ZnMgO showed external quantum efficiency of 21.8 % and current efficiency of 23.4 cd/A.
| Original language | English |
|---|---|
| Pages (from-to) | 800-802 |
| Number of pages | 3 |
| Journal | Proceedings of the International Display Workshops |
| Volume | 27 |
| Publication status | Published - 9 Dec 2021 |
| Event | 27th International Display Workshops, IDW 2020 - Virtual, Online Duration: 9 Dec 2020 → 11 Dec 2020 |
Bibliographical note
Publisher Copyright:© 2020 ITE and SID.
Keywords
- Charge balance
- Exciton quenching
- Quantum dot light emitting diode