Abstract
We report the effect of gate splitting on the performance and stability of coplanar amorphous-Indium-Gallium-Zinc-Oxide (a- IGZO) TFTs. Splitting gate reduces the threshold voltage (Vth) shift by PBTS (positive bias temperature stress) and improves the performance uniformity. The gate driver made of split gates also shows better performance and stability compared with the conventional single gate shift register.
| Original language | English |
|---|---|
| Title of host publication | Digest of Technical Papers - SID International Symposium |
| Editors | Kelly Jean Fitzsimmons |
| Publisher | John Wiley and Sons Inc. |
| Pages | 878-881 |
| Number of pages | 4 |
| Edition | Book 2 |
| ISBN (Electronic) | 9781510896161, 9781510896161, 9781510896161 |
| DOIs | |
| Publication status | Published - 2019 |
| Event | SID Symposium, Seminar, and Exhibition 2019, Display Week 2019 - San Jose, United States Duration: 12 May 2019 → 17 May 2019 |
Publication series
| Name | Digest of Technical Papers - SID International Symposium |
|---|---|
| Number | Book 2 |
| Volume | 50 |
| ISSN (Print) | 0097-966X |
| ISSN (Electronic) | 2168-0159 |
Conference
| Conference | SID Symposium, Seminar, and Exhibition 2019, Display Week 2019 |
|---|---|
| Country/Territory | United States |
| City | San Jose |
| Period | 12/05/19 → 17/05/19 |
Bibliographical note
Publisher Copyright:© 2019 SID-the Society for Information Display. All rights reserved.
Keywords
- a-IGZO
- Active matrix
- Oxide
- Shift Register
- Uniformity
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