Highly Robust Oxide Thin Film Transistors for Stretchable Electronics

Md Mehedi Hasan; Jin Jang

doi:10.1109/IFETC.2018.8583949

Highly Robust Oxide Thin Film Transistors for Stretchable Electronics

Md Mehedi Hasan, Jin Jang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

We report the excellent stretchability of oxide TFT by attaching it on elastic PDMS substrate using double-sided PI tape. The device can be stretched by 50% elongation up to 1000 repeated cycles. The electrical resistance of Liquid metal electrode (LME) changed by 11 % after elongation from 5 to 7.5 cm. This technique can be used for the TFTs of stretchable electronics.

Original language	English
Title of host publication	2018 International Flexible Electronics Technology Conference, IFETC 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781538633571
DOIs	https://doi.org/10.1109/IFETC.2018.8583949
Publication status	Published - 19 Dec 2018
Event	2018 International Flexible Electronics Technology Conference, IFETC 2018 - Ottawa, Canada Duration: 7 Aug 2018 → 9 Aug 2018

Publication series

Name	2018 International Flexible Electronics Technology Conference, IFETC 2018

Conference

Conference	2018 International Flexible Electronics Technology Conference, IFETC 2018
Country/Territory	Canada
City	Ottawa
Period	7/08/18 → 9/08/18

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

Keywords

Liquid Metal Electrode (LME)
Oxide
PDMS
PI
Stretchable
Thin film transistor (TFT)

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10.1109/IFETC.2018.8583949

Cite this

Hasan, M. M., & Jang, J. (2018). Highly Robust Oxide Thin Film Transistors for Stretchable Electronics. In 2018 International Flexible Electronics Technology Conference, IFETC 2018 Article 8583949 (2018 International Flexible Electronics Technology Conference, IFETC 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IFETC.2018.8583949

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title = "Highly Robust Oxide Thin Film Transistors for Stretchable Electronics",

abstract = "We report the excellent stretchability of oxide TFT by attaching it on elastic PDMS substrate using double-sided PI tape. The device can be stretched by 50% elongation up to 1000 repeated cycles. The electrical resistance of Liquid metal electrode (LME) changed by 11 % after elongation from 5 to 7.5 cm. This technique can be used for the TFTs of stretchable electronics.",

keywords = "Liquid Metal Electrode (LME), Oxide, PDMS, PI, Stretchable, Thin film transistor (TFT)",

author = "Hasan, {Md Mehedi} and Jin Jang",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 International Flexible Electronics Technology Conference, IFETC 2018 ; Conference date: 07-08-2018 Through 09-08-2018",

year = "2018",

month = dec,

day = "19",

doi = "10.1109/IFETC.2018.8583949",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Hasan, MM & Jang, J 2018, Highly Robust Oxide Thin Film Transistors for Stretchable Electronics. in 2018 International Flexible Electronics Technology Conference, IFETC 2018., 8583949, 2018 International Flexible Electronics Technology Conference, IFETC 2018, Institute of Electrical and Electronics Engineers Inc., 2018 International Flexible Electronics Technology Conference, IFETC 2018, Ottawa, Canada, 7/08/18. https://doi.org/10.1109/IFETC.2018.8583949

Highly Robust Oxide Thin Film Transistors for Stretchable Electronics. / Hasan, Md Mehedi; Jang, Jin.
2018 International Flexible Electronics Technology Conference, IFETC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. 8583949 (2018 International Flexible Electronics Technology Conference, IFETC 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Jang, Jin

PY - 2018/12/19

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N2 - We report the excellent stretchability of oxide TFT by attaching it on elastic PDMS substrate using double-sided PI tape. The device can be stretched by 50% elongation up to 1000 repeated cycles. The electrical resistance of Liquid metal electrode (LME) changed by 11 % after elongation from 5 to 7.5 cm. This technique can be used for the TFTs of stretchable electronics.

AB - We report the excellent stretchability of oxide TFT by attaching it on elastic PDMS substrate using double-sided PI tape. The device can be stretched by 50% elongation up to 1000 repeated cycles. The electrical resistance of Liquid metal electrode (LME) changed by 11 % after elongation from 5 to 7.5 cm. This technique can be used for the TFTs of stretchable electronics.

KW - Liquid Metal Electrode (LME)

KW - Oxide

KW - PDMS

KW - PI

KW - Stretchable

KW - Thin film transistor (TFT)

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PB - Institute of Electrical and Electronics Engineers Inc.

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ER -

Highly Robust Oxide Thin Film Transistors for Stretchable Electronics

Abstract

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Bibliographical note

Keywords

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