Highly robust oxide thin film transistors with split active semiconductor and source/drain electrodes

Suhui Lee; Di Geng; Ling Li; Ming Liu; Jin Jang

doi:10.1109/IEDM.2017.8268350

Highly robust oxide thin film transistors with split active semiconductor and source/drain electrodes

Suhui Lee, Di Geng, Ling Li, Ming Liu, Jin Jang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

We report extremely stable and high performance etch-stopper (E/S) a-IGZO TFT on plastic substrate by using split active oxide semiconductor and source/drain electrodes. The a-IGZO TFTs exhibit high mobility over 70cm2/Vs and extremely stable under positive bias stress and mechanical stress. Therefore, this technology can be used for the manufacturing of high resolution flexible AMOLED displays.

Original language	English
Title of host publication	2017 IEEE International Electron Devices Meeting, IEDM 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	8.2.1-8.2.4
ISBN (Electronic)	9781538635599
DOIs	https://doi.org/10.1109/IEDM.2017.8268350
Publication status	Published - 23 Jan 2018
Event	63rd IEEE International Electron Devices Meeting, IEDM 2017 - San Francisco, United States Duration: 2 Dec 2017 → 6 Dec 2017

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	63rd IEEE International Electron Devices Meeting, IEDM 2017
Country/Territory	United States
City	San Francisco
Period	2/12/17 → 6/12/17

Bibliographical note

Publisher Copyright:
© 2017 IEEE.

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10.1109/IEDM.2017.8268350

Cite this

Lee, S., Geng, D., Li, L., Liu, M., & Jang, J. (2018). Highly robust oxide thin film transistors with split active semiconductor and source/drain electrodes. In 2017 IEEE International Electron Devices Meeting, IEDM 2017 (pp. 8.2.1-8.2.4). (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2017.8268350

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title = "Highly robust oxide thin film transistors with split active semiconductor and source/drain electrodes",

abstract = "We report extremely stable and high performance etch-stopper (E/S) a-IGZO TFT on plastic substrate by using split active oxide semiconductor and source/drain electrodes. The a-IGZO TFTs exhibit high mobility over 70cm2/Vs and extremely stable under positive bias stress and mechanical stress. Therefore, this technology can be used for the manufacturing of high resolution flexible AMOLED displays.",

author = "Suhui Lee and Di Geng and Ling Li and Ming Liu and Jin Jang",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 63rd IEEE International Electron Devices Meeting, IEDM 2017 ; Conference date: 02-12-2017 Through 06-12-2017",

year = "2018",

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doi = "10.1109/IEDM.2017.8268350",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

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Lee, S, Geng, D, Li, L, Liu, M & Jang, J 2018, Highly robust oxide thin film transistors with split active semiconductor and source/drain electrodes. in 2017 IEEE International Electron Devices Meeting, IEDM 2017. Technical Digest - International Electron Devices Meeting, IEDM, Institute of Electrical and Electronics Engineers Inc., pp. 8.2.1-8.2.4, 63rd IEEE International Electron Devices Meeting, IEDM 2017, San Francisco, United States, 2/12/17. https://doi.org/10.1109/IEDM.2017.8268350

Highly robust oxide thin film transistors with split active semiconductor and source/drain electrodes. / Lee, Suhui; Geng, Di; Li, Ling et al.
2017 IEEE International Electron Devices Meeting, IEDM 2017. Institute of Electrical and Electronics Engineers Inc., 2018. p. 8.2.1-8.2.4 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Lee, Suhui

AU - Geng, Di

AU - Li, Ling

AU - Liu, Ming

AU - Jang, Jin

PY - 2018/1/23

Y1 - 2018/1/23

N2 - We report extremely stable and high performance etch-stopper (E/S) a-IGZO TFT on plastic substrate by using split active oxide semiconductor and source/drain electrodes. The a-IGZO TFTs exhibit high mobility over 70cm2/Vs and extremely stable under positive bias stress and mechanical stress. Therefore, this technology can be used for the manufacturing of high resolution flexible AMOLED displays.

AB - We report extremely stable and high performance etch-stopper (E/S) a-IGZO TFT on plastic substrate by using split active oxide semiconductor and source/drain electrodes. The a-IGZO TFTs exhibit high mobility over 70cm2/Vs and extremely stable under positive bias stress and mechanical stress. Therefore, this technology can be used for the manufacturing of high resolution flexible AMOLED displays.

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T3 - Technical Digest - International Electron Devices Meeting, IEDM

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BT - 2017 IEEE International Electron Devices Meeting, IEDM 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 63rd IEEE International Electron Devices Meeting, IEDM 2017

Y2 - 2 December 2017 through 6 December 2017

ER -

Lee S, Geng D, Li L, Liu M, Jang J. Highly robust oxide thin film transistors with split active semiconductor and source/drain electrodes. In 2017 IEEE International Electron Devices Meeting, IEDM 2017. Institute of Electrical and Electronics Engineers Inc. 2018. p. 8.2.1-8.2.4. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2017.8268350

Highly robust oxide thin film transistors with split active semiconductor and source/drain electrodes

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