Highly stable self-aligned coplanar a-IGZO TFTs under high temperature stress

Jiseob Lee; Suhui Lee; Duk Young Jeong; Jin Jang

doi:10.1109/CAD-TFT.2018.8608117

Highly stable self-aligned coplanar a-IGZO TFTs under high temperature stress

Jiseob Lee
, Suhui Lee
, Duk Young Jeong
, Jin Jang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We developed the high performance and stable, self-aligned (SA) coplanar amorphous In-Ga-Zn-O (a-IGZO) thin-film transistor (TFT). The device performance is stable under positive bias temperature stress at 125 °C. The shift register made of the SA coplanar a-IGZO TFTs exhibit very stable performance at 125 °C.

Original language	English
Title of host publication	2018 9th International Conference on Computer Aided Design for Thin-Film Transistor Technologies, CAD-TFT 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728100968
DOIs	https://doi.org/10.1109/CAD-TFT.2018.8608117
Publication status	Published - 10 Jan 2019
Event	9th International Conference on Computer Aided Design for Thin-Film Transistor Technologies, CAD-TFT 2018 - Shenzhen, China Duration: 16 Nov 2018 → 18 Nov 2018

Publication series

Name	2018 9th International Conference on Computer Aided Design for Thin-Film Transistor Technologies, CAD-TFT 2018

Conference

Conference	9th International Conference on Computer Aided Design for Thin-Film Transistor Technologies, CAD-TFT 2018
Country/Territory	China
City	Shenzhen
Period	16/11/18 → 18/11/18

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

Keywords

Amorphous indium-gallium-zinc-oxide (a-IGZO)
coplanar
self-aligned (SA)
stability
thin-film transistor (TFT)

Access to Document

10.1109/CAD-TFT.2018.8608117

Cite this

Lee, J., Lee, S., Jeong, D. Y., & Jang, J. (2019). Highly stable self-aligned coplanar a-IGZO TFTs under high temperature stress. In 2018 9th International Conference on Computer Aided Design for Thin-Film Transistor Technologies, CAD-TFT 2018 Article 8608117 (2018 9th International Conference on Computer Aided Design for Thin-Film Transistor Technologies, CAD-TFT 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CAD-TFT.2018.8608117

Lee, Jiseob ; Lee, Suhui ; Jeong, Duk Young et al. / Highly stable self-aligned coplanar a-IGZO TFTs under high temperature stress. 2018 9th International Conference on Computer Aided Design for Thin-Film Transistor Technologies, CAD-TFT 2018. Institute of Electrical and Electronics Engineers Inc., 2019. (2018 9th International Conference on Computer Aided Design for Thin-Film Transistor Technologies, CAD-TFT 2018).

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title = "Highly stable self-aligned coplanar a-IGZO TFTs under high temperature stress",

abstract = "We developed the high performance and stable, self-aligned (SA) coplanar amorphous In-Ga-Zn-O (a-IGZO) thin-film transistor (TFT). The device performance is stable under positive bias temperature stress at 125 °C. The shift register made of the SA coplanar a-IGZO TFTs exhibit very stable performance at 125 °C.",

keywords = "Amorphous indium-gallium-zinc-oxide (a-IGZO), coplanar, self-aligned (SA), stability, thin-film transistor (TFT)",

author = "Jiseob Lee and Suhui Lee and Jeong, \{Duk Young\} and Jin Jang",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 9th International Conference on Computer Aided Design for Thin-Film Transistor Technologies, CAD-TFT 2018 ; Conference date: 16-11-2018 Through 18-11-2018",

year = "2019",

month = jan,

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doi = "10.1109/CAD-TFT.2018.8608117",

language = "English",

series = "2018 9th International Conference on Computer Aided Design for Thin-Film Transistor Technologies, CAD-TFT 2018",

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Lee, J, Lee, S, Jeong, DY & Jang, J 2019, Highly stable self-aligned coplanar a-IGZO TFTs under high temperature stress. in 2018 9th International Conference on Computer Aided Design for Thin-Film Transistor Technologies, CAD-TFT 2018., 8608117, 2018 9th International Conference on Computer Aided Design for Thin-Film Transistor Technologies, CAD-TFT 2018, Institute of Electrical and Electronics Engineers Inc., 9th International Conference on Computer Aided Design for Thin-Film Transistor Technologies, CAD-TFT 2018, Shenzhen, China, 16/11/18. https://doi.org/10.1109/CAD-TFT.2018.8608117

Highly stable self-aligned coplanar a-IGZO TFTs under high temperature stress. / Lee, Jiseob; Lee, Suhui; Jeong, Duk Young et al.
2018 9th International Conference on Computer Aided Design for Thin-Film Transistor Technologies, CAD-TFT 2018. Institute of Electrical and Electronics Engineers Inc., 2019. 8608117 (2018 9th International Conference on Computer Aided Design for Thin-Film Transistor Technologies, CAD-TFT 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Jeong, Duk Young

AU - Jang, Jin

PY - 2019/1/10

Y1 - 2019/1/10

N2 - We developed the high performance and stable, self-aligned (SA) coplanar amorphous In-Ga-Zn-O (a-IGZO) thin-film transistor (TFT). The device performance is stable under positive bias temperature stress at 125 °C. The shift register made of the SA coplanar a-IGZO TFTs exhibit very stable performance at 125 °C.

AB - We developed the high performance and stable, self-aligned (SA) coplanar amorphous In-Ga-Zn-O (a-IGZO) thin-film transistor (TFT). The device performance is stable under positive bias temperature stress at 125 °C. The shift register made of the SA coplanar a-IGZO TFTs exhibit very stable performance at 125 °C.

KW - Amorphous indium-gallium-zinc-oxide (a-IGZO)

KW - coplanar

KW - self-aligned (SA)

KW - stability

KW - thin-film transistor (TFT)

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M3 - Conference contribution

AN - SCOPUS:85061935184

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BT - 2018 9th International Conference on Computer Aided Design for Thin-Film Transistor Technologies, CAD-TFT 2018

PB - Institute of Electrical and Electronics Engineers Inc.

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Y2 - 16 November 2018 through 18 November 2018

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Lee J, Lee S, Jeong DY, Jang J. Highly stable self-aligned coplanar a-IGZO TFTs under high temperature stress. In 2018 9th International Conference on Computer Aided Design for Thin-Film Transistor Technologies, CAD-TFT 2018. Institute of Electrical and Electronics Engineers Inc. 2019. 8608117. (2018 9th International Conference on Computer Aided Design for Thin-Film Transistor Technologies, CAD-TFT 2018). doi: 10.1109/CAD-TFT.2018.8608117

Highly stable self-aligned coplanar a-IGZO TFTs under high temperature stress

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Keywords

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