Abstract
We report the top-gate(TG) self-align(SA) bulk-accumulation(BA) coplanar amorphous indium-gallium-zinc oxide (a-IGZO) thin-film-transistors(TFTs), and its high thermal stability. The advantages of BA TFTs are higher drain currents, threshold-volatge near OV, lower subthreshold slope, good uniformity and stable. And, the BA TFTs with SA structure shows excellent stability under the high temperature.
| Original language | English |
|---|---|
| Title of host publication | 25th International Display Workshops, IDW 2018 |
| Publisher | International Display Workshops |
| Pages | 319-322 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781510883918 |
| Publication status | Published - 2018 |
| Event | 25th International Display Workshops, IDW 2018 - Nagoya, Japan Duration: 12 Dec 2018 → 14 Dec 2018 |
Publication series
| Name | Proceedings of the International Display Workshops |
|---|---|
| Volume | 1 |
| ISSN (Print) | 1883-2490 |
Conference
| Conference | 25th International Display Workshops, IDW 2018 |
|---|---|
| Country/Territory | Japan |
| City | Nagoya |
| Period | 12/12/18 → 14/12/18 |
Bibliographical note
Publisher Copyright:© 2018 International Display Workshops. All rights reserved.
Keywords
- Amorphous indium gallium zinc oxide (a-IGZO)
- Bulk accumulation
- Self-align coplanar
- Thermal stability
