Hydrogen passivation of dopants in amorphous silicon

The effects of boron and phosphorus passivation by hydrogen in a-Si deposited by a low pressure chemical vapor deposition technique at high temperatures and post-hydrogenated by ion implantation were investigated. The high boron- or phosphorus-doped films were implanted with hydrogen doses corresponding to the range of 0.05-12 at.%. It was found that hydrogenation causes the deactivation of dopants, which increases with hydrogen content and that less hydrogen is necessary to initiate changes in boron- than in phosphorus-doped films.