Abstract
We present optical properties of polycrystalline Si, and TFT device by Imaging Spectroscopic Ellipsometry (ISE). ISE has spatial resolution ability, so we can observe the structure of device whose contrast depends on the dielectric function value of the area of interest. We could observe the difference between polycrystalline Si and amorphous Si clearly and also structure of TFT device.
| Original language | English |
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| Pages (from-to) | 485-488 |
| Number of pages | 4 |
| Journal | Institute of Physics Conference Series |
| Volume | 184 |
| Publication status | Published - 2005 |
| Event | 31st International Symposium of Compound Semiconductors 2004 - Seoul, Korea, Republic of Duration: 12 Sept 2004 → 16 Dec 2004 |