Imprint phenomenon of ferroelectric switching characteristics in BaTiO3/PbTiO3 multilayer thin films

Yoonho Ahn, Jong Yeog Son

Research output: Contribution to journalArticlepeer-review

Abstract

Materials: in which ferroelectric polarization can be locally controlled have potential for high-density information storage applications. Herein, we investigated the ferroelectric polarization switching characteristics of epitaxial BaTiO3/PbTiO3 (BTO/PTO) multilayer thin films by using piezoresponse force microscopy. Pulsed laser deposition was used to form an epitaxial BTO layer on an epitaxial ferroelectric PTO single thin film. This epitaxial BTO/PTO multilayer thin film exhibited an imprint phenomenon, in which the internal electric field was asymmetrically induced and the ferroelectric hysteresis loop was shifted. Owing to this imprint phenomenon, a large difference occurred between the two coercive electric fields of the ferroelectric hysteresis loop. Because the coercive electric field was reduced in one direction, a relatively small switching voltage was required to form ferroelectric polarization nanobits in a local region and the size of the switched nanobits was minimized. This behavior can be utilized as the basis for developing high-density ferroelectric-based storage media.

Original languageEnglish
Article number162088
JournalJournal of Alloys and Compounds
Volume891
DOIs
Publication statusPublished - 25 Jan 2022

Keywords

  • BaTiO/PbTiO multilayer
  • Ferroelectrics
  • Imprint phenomenon
  • Nanobit
  • Piezoresponse force microscopy
  • Thin film

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