Improved amorphous silicon solar cells using RPCVD

Kyu Chang Park; Tae Gon Kim; Sung Ki Kim; Sung Chul Kim; Myung Hak Hwang; Jung Mok Jun; Jin Jang

doi:10.1557/proc-297-767

Improved amorphous silicon solar cells using RPCVD

Kyu Chang Park, Tae Gon Kim, Sung Ki Kim, Sung Chul Kim, Myung Hak Hwang, Jung Mok Jun, Jin Jang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Citations (Scopus)

Abstract

We have studied the depositions of amorphous silicon, silicon carbon alloy, doped microcrystalline silicon in order to apply these films as the component materials for the p-i-n and double stacked solar cells. We have obtained low band gap a-Si:H by decreasing the deposition rate under the proper preparation conditions and highly conductive, thin microcrystalline Si and SiC layers. We have developed a stable a-Si/a-Si double stacked solar cell with a conversion efficiency of approximately 9% using narrow band gap a-Si:H as a i-layer of bottom cell. The performance of this cell does not degrade until 100 hrs illumination under 350 mW/cm².

Original language	English
Title of host publication	Amorphous Silicon Technology
Publisher	Publ by Materials Research Society
Pages	767-778
Number of pages	12
ISBN (Print)	155899193X, 9781558991934
DOIs	https://doi.org/10.1557/proc-297-767
Publication status	Published - 1993
Event	Proceedings of the MRS Spring Meeting - San Francisco, CA, USA Duration: 13 Apr 1993 → 16 Apr 1993

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	297
ISSN (Print)	0272-9172

Conference

Conference	Proceedings of the MRS Spring Meeting
City	San Francisco, CA, USA
Period	13/04/93 → 16/04/93

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Cite this

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title = "Improved amorphous silicon solar cells using RPCVD",

abstract = "We have studied the depositions of amorphous silicon, silicon carbon alloy, doped microcrystalline silicon in order to apply these films as the component materials for the p-i-n and double stacked solar cells. We have obtained low band gap a-Si:H by decreasing the deposition rate under the proper preparation conditions and highly conductive, thin microcrystalline Si and SiC layers. We have developed a stable a-Si/a-Si double stacked solar cell with a conversion efficiency of approximately 9% using narrow band gap a-Si:H as a i-layer of bottom cell. The performance of this cell does not degrade until 100 hrs illumination under 350 mW/cm2.",

author = "Park, {Kyu Chang} and Kim, {Tae Gon} and Kim, {Sung Ki} and Kim, {Sung Chul} and Hwang, {Myung Hak} and Jun, {Jung Mok} and Jin Jang",

year = "1993",

doi = "10.1557/proc-297-767",

language = "English",

isbn = "155899193X",

series = "Materials Research Society Symposium Proceedings",

publisher = "Publ by Materials Research Society",

pages = "767--778",

booktitle = "Amorphous Silicon Technology",

}

Park, KC, Kim, TG, Kim, SK, Kim, SC, Hwang, MH, Jun, JM & Jang, J 1993, Improved amorphous silicon solar cells using RPCVD. in Amorphous Silicon Technology. Materials Research Society Symposium Proceedings, vol. 297, Publ by Materials Research Society, pp. 767-778, Proceedings of the MRS Spring Meeting, San Francisco, CA, USA, 13/04/93. https://doi.org/10.1557/proc-297-767

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T1 - Improved amorphous silicon solar cells using RPCVD

AU - Park, Kyu Chang

AU - Kim, Tae Gon

AU - Kim, Sung Ki

AU - Kim, Sung Chul

AU - Hwang, Myung Hak

AU - Jun, Jung Mok

AU - Jang, Jin

PY - 1993

Y1 - 1993

N2 - We have studied the depositions of amorphous silicon, silicon carbon alloy, doped microcrystalline silicon in order to apply these films as the component materials for the p-i-n and double stacked solar cells. We have obtained low band gap a-Si:H by decreasing the deposition rate under the proper preparation conditions and highly conductive, thin microcrystalline Si and SiC layers. We have developed a stable a-Si/a-Si double stacked solar cell with a conversion efficiency of approximately 9% using narrow band gap a-Si:H as a i-layer of bottom cell. The performance of this cell does not degrade until 100 hrs illumination under 350 mW/cm2.

AB - We have studied the depositions of amorphous silicon, silicon carbon alloy, doped microcrystalline silicon in order to apply these films as the component materials for the p-i-n and double stacked solar cells. We have obtained low band gap a-Si:H by decreasing the deposition rate under the proper preparation conditions and highly conductive, thin microcrystalline Si and SiC layers. We have developed a stable a-Si/a-Si double stacked solar cell with a conversion efficiency of approximately 9% using narrow band gap a-Si:H as a i-layer of bottom cell. The performance of this cell does not degrade until 100 hrs illumination under 350 mW/cm2.

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M3 - Conference contribution

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SN - 9781558991934

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PB - Publ by Materials Research Society

T2 - Proceedings of the MRS Spring Meeting

Y2 - 13 April 1993 through 16 April 1993

ER -

Improved amorphous silicon solar cells using RPCVD

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