Improvement of contact resistance between carbon nanotubes and metal electrodes for high performance electronics

Yoojin Song; Seong Jun Kang

doi:10.1116/1.3520436

Improvement of contact resistance between carbon nanotubes and metal electrodes for high performance electronics

Yoojin Song
, Seong Jun Kang

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The authors developed a simple method that allows control of contact resistance between random network carbon nanotubes (CNTs) and metals such as gold and palladium to facilitate the development of high performance electronics on plastic substrates. The approach involves the deposition of a small amount of aluminum between random network CNTs and metal electrodes during the device fabrication process. The contact resistances of the resulting devices were measured, which showed that devices containing a thin layer of aluminum have lower contact resistances (Au: 1.086 kω μm and Pd: 2.282 kω μm) than devices without the layer (Au: 6.841 kω μm and Pd: 7.515 kω μm).

Original language	English
Pages (from-to)	110111-110113
Number of pages	3
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	29
Issue number	1
DOIs	https://doi.org/10.1116/1.3520436
Publication status	Published - Jan 2011

Bibliographical note

Funding Information:
This work was supported by a research project of the Korea Research Foundation (Grant Nos. 2010-0015727 and 2010-0003009). The authors thank W. M. Choi for his assistance with the experiments.

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abstract = "The authors developed a simple method that allows control of contact resistance between random network carbon nanotubes (CNTs) and metals such as gold and palladium to facilitate the development of high performance electronics on plastic substrates. The approach involves the deposition of a small amount of aluminum between random network CNTs and metal electrodes during the device fabrication process. The contact resistances of the resulting devices were measured, which showed that devices containing a thin layer of aluminum have lower contact resistances (Au: 1.086 kω μm and Pd: 2.282 kω μm) than devices without the layer (Au: 6.841 kω μm and Pd: 7.515 kω μm).",

author = "Yoojin Song and Kang, \{Seong Jun\}",

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AU - Kang, Seong Jun

N1 - Funding Information: This work was supported by a research project of the Korea Research Foundation (Grant Nos. 2010-0015727 and 2010-0003009). The authors thank W. M. Choi for his assistance with the experiments.

PY - 2011/1

Y1 - 2011/1

N2 - The authors developed a simple method that allows control of contact resistance between random network carbon nanotubes (CNTs) and metals such as gold and palladium to facilitate the development of high performance electronics on plastic substrates. The approach involves the deposition of a small amount of aluminum between random network CNTs and metal electrodes during the device fabrication process. The contact resistances of the resulting devices were measured, which showed that devices containing a thin layer of aluminum have lower contact resistances (Au: 1.086 kω μm and Pd: 2.282 kω μm) than devices without the layer (Au: 6.841 kω μm and Pd: 7.515 kω μm).

AB - The authors developed a simple method that allows control of contact resistance between random network carbon nanotubes (CNTs) and metals such as gold and palladium to facilitate the development of high performance electronics on plastic substrates. The approach involves the deposition of a small amount of aluminum between random network CNTs and metal electrodes during the device fabrication process. The contact resistances of the resulting devices were measured, which showed that devices containing a thin layer of aluminum have lower contact resistances (Au: 1.086 kω μm and Pd: 2.282 kω μm) than devices without the layer (Au: 6.841 kω μm and Pd: 7.515 kω μm).

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JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

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Improvement of contact resistance between carbon nanotubes and metal electrodes for high performance electronics

Abstract

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