Abstract
High performance of CLC poly-Si thin film transistor used in AMLCD and AMOLED applications, directly depends on the density of states (DOS) in the channel material. In this paper, we investigated the DOS of CLC poly-Si TFTs using microlens array and conventional CLC method. The CLC poly-Si TFTs using microlens array has lower DOS than conventional CLC method. Also, we have compared with CLC poly-Si TFTs and ELA poly-Si TFTs.
| Original language | English |
|---|---|
| Pages | 2007-2008 |
| Number of pages | 2 |
| Publication status | Published - 2007 |
| Event | 14th International Display Workshops, IDW '07 - Sapporo, Japan Duration: 5 Dec 2007 → 5 Dec 2007 |
Conference
| Conference | 14th International Display Workshops, IDW '07 |
|---|---|
| Country/Territory | Japan |
| City | Sapporo |
| Period | 5/12/07 → 5/12/07 |
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