Improvement of electron injection and transport ability of C60 electron transport layer

T. J. Park; Y. K. Lee; J. Y. Kim; S. K. Kwon; M. H. Kang; D. H. Song; J. H. Kwon; Jin Jang

Improvement of electron injection and transport ability of C₆₀ electron transport layer

T. J. Park, Y. K. Lee, J. Y. Kim, S. K. Kwon, M. H. Kang, D. H. Song, J. H. Kwon, Jin Jang

Research output: Contribution to conference › Paper › peer-review

Abstract

We have developed a new electron transport layer (ETL) of a n-typed doped C₆₀ composite for small molecule organic light-emitting diodes (OLEDs). The device using a n-type doped C₆₀ material as an ETL showed much higher electron injection ability compared with un-doped one. The current density of n-type doped C₆₀ device exhibited 30mA/cm ² at 3.4 V, while un-doped C₆₀ device showed 2.5mA/cm ² at the same voltage. This result indicates that n-type doped C ₆₀ facilitates electron injection and transport from AI cathode without any electron injection barrier.

Original language	English
Pages	671-674
Number of pages	4
Publication status	Published - 2005
Event	IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005 - Takamatsu, Japan Duration: 6 Dec 2005 → 9 Dec 2005

Conference

Conference	IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005
Country/Territory	Japan
City	Takamatsu
Period	6/12/05 → 9/12/05

Cite this

@conference{d36e4430fc784012bde8cb4b726ba693,

title = "Improvement of electron injection and transport ability of C60 electron transport layer",

abstract = "We have developed a new electron transport layer (ETL) of a n-typed doped C60 composite for small molecule organic light-emitting diodes (OLEDs). The device using a n-type doped C60 material as an ETL showed much higher electron injection ability compared with un-doped one. The current density of n-type doped C60 device exhibited 30mA/cm 2 at 3.4 V, while un-doped C60 device showed 2.5mA/cm 2 at the same voltage. This result indicates that n-type doped C 60 facilitates electron injection and transport from AI cathode without any electron injection barrier.",

author = "Park, {T. J.} and Lee, {Y. K.} and Kim, {J. Y.} and Kwon, {S. K.} and Kang, {M. H.} and Song, {D. H.} and Kwon, {J. H.} and Jin Jang",

note = "Copyright: Copyright 2008 Elsevier B.V., All rights reserved.; IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005 ; Conference date: 06-12-2005 Through 09-12-2005",

year = "2005",

language = "English",

pages = "671--674",

}

TY - CONF

T1 - Improvement of electron injection and transport ability of C60 electron transport layer

AU - Park, T. J.

AU - Lee, Y. K.

AU - Kim, J. Y.

AU - Kwon, S. K.

AU - Kang, M. H.

AU - Song, D. H.

AU - Kwon, J. H.

AU - Jang, Jin

PY - 2005

Y1 - 2005

N2 - We have developed a new electron transport layer (ETL) of a n-typed doped C60 composite for small molecule organic light-emitting diodes (OLEDs). The device using a n-type doped C60 material as an ETL showed much higher electron injection ability compared with un-doped one. The current density of n-type doped C60 device exhibited 30mA/cm 2 at 3.4 V, while un-doped C60 device showed 2.5mA/cm 2 at the same voltage. This result indicates that n-type doped C 60 facilitates electron injection and transport from AI cathode without any electron injection barrier.

AB - We have developed a new electron transport layer (ETL) of a n-typed doped C60 composite for small molecule organic light-emitting diodes (OLEDs). The device using a n-type doped C60 material as an ETL showed much higher electron injection ability compared with un-doped one. The current density of n-type doped C60 device exhibited 30mA/cm 2 at 3.4 V, while un-doped C60 device showed 2.5mA/cm 2 at the same voltage. This result indicates that n-type doped C 60 facilitates electron injection and transport from AI cathode without any electron injection barrier.

UR - http://www.scopus.com/inward/record.url?scp=33644596426&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:33644596426

SP - 671

EP - 674

T2 - IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005

Y2 - 6 December 2005 through 9 December 2005

ER -

Improvement of electron injection and transport ability of C₆₀ electron transport layer

Abstract

Conference

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