Improvement of photoluminescence and electroluminescence characteristics of MBE-grown In0.53Ga0.47As/In0.53(Ga0.6Al0. 4)0.47As quantum well laser structure with InGaAlAs digital alloys by thermal annealing

J. S. Yu; J. D. Song; J. M. Kim; S. J. Bae; Y. T. Lee; H. Lim

doi:10.1007/s00339-002-1978-3

Improvement of photoluminescence and electroluminescence characteristics of MBE-grown In_0.53Ga_0.47As/In_0.53(Ga_0.6Al_{0. 4})_0.47As quantum well laser structure with InGaAlAs digital alloys by thermal annealing

J. S. Yu
, J. D. Song
, J. M. Kim
, S. J. Bae
, Y. T. Lee
, H. Lim

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We investigated the effect of rapid thermal annealing (RTA) on the photoluminescence (PL) and electroluminescence of the In_0.53Ga_0.47As/In_0.53 (Ga_0.6 Al_0.4)_0.47 As multiple quantum well (MQW) laser structure with InGaAlAs barrier layers provided by the digital-alloy technique. The SiO₂-(Si₃N₄-) capped samples followed by the RTA exhibited a significant improvement of PL intensity without any appreciable shifts in PL peak energy for settings of up to 750 °C (800 °C) for 45 s. This improvement is attributed to the annealing of nonradiative defects in InAlAs layers of digital-alloy InGaAlAs and partially those near the heterointerfaces of the digital-alloy layers. The InGaAs/InGaAlAs MQW laser diodes fabricated on the samples annealed at 850 °C show a hugely improved lasing performance.

Original language	English
Pages (from-to)	979-982
Number of pages	4
Journal	Applied Physics A: Materials Science and Processing
Volume	76
Issue number	6
DOIs	https://doi.org/10.1007/s00339-002-1978-3
Publication status	Published - Apr 2003

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Yu, J. S., Song, J. D., Kim, J. M., Bae, S. J., Lee, Y. T., & Lim, H. (2003). Improvement of photoluminescence and electroluminescence characteristics of MBE-grown In_0.53Ga_0.47As/In_0.53(Ga_0.6Al_{0. 4})_0.47As quantum well laser structure with InGaAlAs digital alloys by thermal annealing. Applied Physics A: Materials Science and Processing, 76(6), 979-982. https://doi.org/10.1007/s00339-002-1978-3

@article{3a5298bd107a428a9c80b74e84464828,

title = "Improvement of photoluminescence and electroluminescence characteristics of MBE-grown In0.53Ga0.47As/In0.53(Ga0.6Al0. 4)0.47As quantum well laser structure with InGaAlAs digital alloys by thermal annealing",

abstract = "We investigated the effect of rapid thermal annealing (RTA) on the photoluminescence (PL) and electroluminescence of the In0.53Ga0.47As/In0.53 (Ga0.6 Al0.4)0.47 As multiple quantum well (MQW) laser structure with InGaAlAs barrier layers provided by the digital-alloy technique. The SiO2-(Si3N4-) capped samples followed by the RTA exhibited a significant improvement of PL intensity without any appreciable shifts in PL peak energy for settings of up to 750 °C (800 °C) for 45 s. This improvement is attributed to the annealing of nonradiative defects in InAlAs layers of digital-alloy InGaAlAs and partially those near the heterointerfaces of the digital-alloy layers. The InGaAs/InGaAlAs MQW laser diodes fabricated on the samples annealed at 850 °C show a hugely improved lasing performance.",

author = "Yu, \{J. S.\} and Song, \{J. D.\} and Kim, \{J. M.\} and Bae, \{S. J.\} and Lee, \{Y. T.\} and H. Lim",

year = "2003",

month = apr,

doi = "10.1007/s00339-002-1978-3",

language = "English",

volume = "76",

pages = "979--982",

journal = "Applied Physics A: Materials Science and Processing",

issn = "0947-8396",

publisher = "Springer Heidelberg",

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Yu, JS, Song, JD, Kim, JM, Bae, SJ, Lee, YT & Lim, H 2003, 'Improvement of photoluminescence and electroluminescence characteristics of MBE-grown In_0.53Ga_0.47As/In_0.53(Ga_0.6Al_{0. 4})_0.47As quantum well laser structure with InGaAlAs digital alloys by thermal annealing', Applied Physics A: Materials Science and Processing, vol. 76, no. 6, pp. 979-982. https://doi.org/10.1007/s00339-002-1978-3

Improvement of photoluminescence and electroluminescence characteristics of MBE-grown In_0.53Ga_0.47As/In_0.53(Ga_0.6Al_{0. 4})_0.47As quantum well laser structure with InGaAlAs digital alloys by thermal annealing. / Yu, J. S.; Song, J. D.; Kim, J. M. et al.
In: Applied Physics A: Materials Science and Processing, Vol. 76, No. 6, 04.2003, p. 979-982.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Improvement of photoluminescence and electroluminescence characteristics of MBE-grown In0.53Ga0.47As/In0.53(Ga0.6Al0. 4)0.47As quantum well laser structure with InGaAlAs digital alloys by thermal annealing

AU - Yu, J. S.

AU - Song, J. D.

AU - Kim, J. M.

AU - Bae, S. J.

AU - Lee, Y. T.

AU - Lim, H.

PY - 2003/4

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N2 - We investigated the effect of rapid thermal annealing (RTA) on the photoluminescence (PL) and electroluminescence of the In0.53Ga0.47As/In0.53 (Ga0.6 Al0.4)0.47 As multiple quantum well (MQW) laser structure with InGaAlAs barrier layers provided by the digital-alloy technique. The SiO2-(Si3N4-) capped samples followed by the RTA exhibited a significant improvement of PL intensity without any appreciable shifts in PL peak energy for settings of up to 750 °C (800 °C) for 45 s. This improvement is attributed to the annealing of nonradiative defects in InAlAs layers of digital-alloy InGaAlAs and partially those near the heterointerfaces of the digital-alloy layers. The InGaAs/InGaAlAs MQW laser diodes fabricated on the samples annealed at 850 °C show a hugely improved lasing performance.

AB - We investigated the effect of rapid thermal annealing (RTA) on the photoluminescence (PL) and electroluminescence of the In0.53Ga0.47As/In0.53 (Ga0.6 Al0.4)0.47 As multiple quantum well (MQW) laser structure with InGaAlAs barrier layers provided by the digital-alloy technique. The SiO2-(Si3N4-) capped samples followed by the RTA exhibited a significant improvement of PL intensity without any appreciable shifts in PL peak energy for settings of up to 750 °C (800 °C) for 45 s. This improvement is attributed to the annealing of nonradiative defects in InAlAs layers of digital-alloy InGaAlAs and partially those near the heterointerfaces of the digital-alloy layers. The InGaAs/InGaAlAs MQW laser diodes fabricated on the samples annealed at 850 °C show a hugely improved lasing performance.

UR - https://www.scopus.com/pages/publications/0037387701

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DO - 10.1007/s00339-002-1978-3

M3 - Article

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JF - Applied Physics A: Materials Science and Processing

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