Improvement of Stability and Performance of Amorphous Indium Gallium Zinc Oxide Thin Film Transistor by Zinc-Tin-Oxide Spray Coating

Hwayeong Lee; Suhui Lee; Youngoo Kim; Abu Bakar Siddik; Mohammad Masum Billah; Jiseob Lee; Jin Jang

doi:10.1109/LED.2020.3018750

Improvement of Stability and Performance of Amorphous Indium Gallium Zinc Oxide Thin Film Transistor by Zinc-Tin-Oxide Spray Coating

Hwayeong Lee
, Suhui Lee
, Youngoo Kim
, Abu Bakar Siddik
, Mohammad Masum Billah
, Jiseob Lee
, Jin Jang

Research output: Contribution to journal › Article › peer-review

40 Citations (Scopus)

Abstract

We report the effect of zinc-Tin-oxide (ZTO) by spray coating on indium gallium zinc oxide (IGZO) thin-film transistor (TFT) for the improvement of both stability and performance. The IGZO/ZTO TFT exhibits the field effect mobility ( {\mu }{\text{FE}} ) of 18.39~{\text{cm}}^{2}{/\text{V}\cdot \text{s}} , threshold voltage ( \text{V}{\text{Th}} ) of 0.1 V, and subthreshold swing (SS) of 0.16V/dec. The TFT shows excellent stabilities: \Delta \text{V}{\text{Th}} of-1.0 V for negative bias illumination stress (NBIS) and 0.4 V for hot carrier stress. These excellent performance and stability are correlated with the built-in electric field by charge distribution at the IGZO/ZTO hetero-junction. Therefore, ZTO spray coating on IGZO semiconductor can be a good technique to improve device stability.

Original language	English
Article number	9174866
Pages (from-to)	1520-1523
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	41
Issue number	10
DOIs	https://doi.org/10.1109/LED.2020.3018750
Publication status	Published - Oct 2020

Bibliographical note

Publisher Copyright:
© 1980-2012 IEEE.

Keywords

TCAD
TFT
ZTO
a-IGZO
heterojunction

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10.1109/LED.2020.3018750

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title = "Improvement of Stability and Performance of Amorphous Indium Gallium Zinc Oxide Thin Film Transistor by Zinc-Tin-Oxide Spray Coating",

abstract = "We report the effect of zinc-Tin-oxide (ZTO) by spray coating on indium gallium zinc oxide (IGZO) thin-film transistor (TFT) for the improvement of both stability and performance. The IGZO/ZTO TFT exhibits the field effect mobility ( \{\textbackslash{}mu \}\{\textbackslash{}text\{FE\}\} ) of 18.39\textasciitilde{}\{\textbackslash{}text\{cm\}\}\textasciicircum{}\{2\}\{/\textbackslash{}text\{V\}\textbackslash{}cdot \textbackslash{}text\{s\}\} , threshold voltage ( \textbackslash{}text\{V\}\{\textbackslash{}text\{Th\}\} ) of 0.1 V, and subthreshold swing (SS) of 0.16V/dec. The TFT shows excellent stabilities: \textbackslash{}Delta \textbackslash{}text\{V\}\{\textbackslash{}text\{Th\}\} of-1.0 V for negative bias illumination stress (NBIS) and 0.4 V for hot carrier stress. These excellent performance and stability are correlated with the built-in electric field by charge distribution at the IGZO/ZTO hetero-junction. Therefore, ZTO spray coating on IGZO semiconductor can be a good technique to improve device stability.",

keywords = "TCAD, TFT, ZTO, a-IGZO, heterojunction",

author = "Hwayeong Lee and Suhui Lee and Youngoo Kim and Siddik, \{Abu Bakar\} and Billah, \{Mohammad Masum\} and Jiseob Lee and Jin Jang",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2020",

month = oct,

doi = "10.1109/LED.2020.3018750",

language = "English",

volume = "41",

pages = "1520--1523",

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AU - Lee, Hwayeong

AU - Lee, Suhui

AU - Kim, Youngoo

AU - Siddik, Abu Bakar

AU - Billah, Mohammad Masum

AU - Lee, Jiseob

AU - Jang, Jin

PY - 2020/10

Y1 - 2020/10

N2 - We report the effect of zinc-Tin-oxide (ZTO) by spray coating on indium gallium zinc oxide (IGZO) thin-film transistor (TFT) for the improvement of both stability and performance. The IGZO/ZTO TFT exhibits the field effect mobility ( {\mu }{\text{FE}} ) of 18.39~{\text{cm}}^{2}{/\text{V}\cdot \text{s}} , threshold voltage ( \text{V}{\text{Th}} ) of 0.1 V, and subthreshold swing (SS) of 0.16V/dec. The TFT shows excellent stabilities: \Delta \text{V}{\text{Th}} of-1.0 V for negative bias illumination stress (NBIS) and 0.4 V for hot carrier stress. These excellent performance and stability are correlated with the built-in electric field by charge distribution at the IGZO/ZTO hetero-junction. Therefore, ZTO spray coating on IGZO semiconductor can be a good technique to improve device stability.

AB - We report the effect of zinc-Tin-oxide (ZTO) by spray coating on indium gallium zinc oxide (IGZO) thin-film transistor (TFT) for the improvement of both stability and performance. The IGZO/ZTO TFT exhibits the field effect mobility ( {\mu }{\text{FE}} ) of 18.39~{\text{cm}}^{2}{/\text{V}\cdot \text{s}} , threshold voltage ( \text{V}{\text{Th}} ) of 0.1 V, and subthreshold swing (SS) of 0.16V/dec. The TFT shows excellent stabilities: \Delta \text{V}{\text{Th}} of-1.0 V for negative bias illumination stress (NBIS) and 0.4 V for hot carrier stress. These excellent performance and stability are correlated with the built-in electric field by charge distribution at the IGZO/ZTO hetero-junction. Therefore, ZTO spray coating on IGZO semiconductor can be a good technique to improve device stability.

KW - TCAD

KW - TFT

KW - ZTO

KW - a-IGZO

KW - heterojunction

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DO - 10.1109/LED.2020.3018750

M3 - Article

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SN - 0741-3106

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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M1 - 9174866

ER -

Improvement of Stability and Performance of Amorphous Indium Gallium Zinc Oxide Thin Film Transistor by Zinc-Tin-Oxide Spray Coating

Abstract

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Keywords

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