Abstract
GaN nanograins were grown on a c-plane sapphire substrate and their strain relaxation due to x-ray irradiation was investigated in-situ by utilizing synchrotron xray scattering. The GaN nanograins were constantly exposed to the synchrotron X-ray and θ-2θ scans through the (002) Bragg peak of GaN were repeatedly carried out during the irradiation. The Bragg peak of the compressively strained GaN nanograins gradually shifted toward higher angle, which implies that the GaN nanograins in compressive strain experienced strain relaxation during x-ray irradiation.
| Original language | English |
|---|---|
| Pages (from-to) | 1699-1701 |
| Number of pages | 3 |
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Volume | 5 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2008 |
| Event | 7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States Duration: 16 Sept 2007 → 21 Sept 2007 |