Abstract
InAs/InP quantum well structures were grown by low pressure metal organic chemical vapor deposition. During the growth, As/P exchange reaction and As carryover were monitored in-situ by surface photoabsorption. We simulated the measured SPA signal using a multilayer model and effective medium theory to obtain As compositional profile which was carried over into the InP layer.
| Original language | English |
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| Pages | 268-271 |
| Number of pages | 4 |
| Publication status | Published - 1999 |
| Event | Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices - Perth, WA, Aust Duration: 14 Dec 1998 → 16 Dec 1998 |
Conference
| Conference | Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices |
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| City | Perth, WA, Aust |
| Period | 14/12/98 → 16/12/98 |