In-situ observation of As/P exchange reaction and As carryover in InAs/InP quantum well structures by surface photoabsorption

Heedon Hwang; Tae Wan Lee; Youngboo Moon; Euijoon Yoon; Young Dong Kim

In-situ observation of As/P exchange reaction and As carryover in InAs/InP quantum well structures by surface photoabsorption

Heedon Hwang
, Tae Wan Lee
, Youngboo Moon
, Euijoon Yoon
, Young Dong Kim

Research output: Contribution to conference › Paper › peer-review

Abstract

InAs/InP quantum well structures were grown by low pressure metal organic chemical vapor deposition. During the growth, As/P exchange reaction and As carryover were monitored in-situ by surface photoabsorption. We simulated the measured SPA signal using a multilayer model and effective medium theory to obtain As compositional profile which was carried over into the InP layer.

Original language	English
Pages	268-271
Number of pages	4
Publication status	Published - 1999
Event	Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices - Perth, WA, Aust Duration: 14 Dec 1998 → 16 Dec 1998

Conference

Conference	Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices
City	Perth, WA, Aust
Period	14/12/98 → 16/12/98

Cite this

@conference{73b585b3f2894b98826d69a291dbac78,

title = "In-situ observation of As/P exchange reaction and As carryover in InAs/InP quantum well structures by surface photoabsorption",

abstract = "InAs/InP quantum well structures were grown by low pressure metal organic chemical vapor deposition. During the growth, As/P exchange reaction and As carryover were monitored in-situ by surface photoabsorption. We simulated the measured SPA signal using a multilayer model and effective medium theory to obtain As compositional profile which was carried over into the InP layer.",

author = "Heedon Hwang and Lee, \{Tae Wan\} and Youngboo Moon and Euijoon Yoon and Kim, \{Young Dong\}",

note = "Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.; Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices ; Conference date: 14-12-1998 Through 16-12-1998",

year = "1999",

language = "English",

pages = "268--271",

}

In-situ observation of As/P exchange reaction and As carryover in InAs/InP quantum well structures by surface photoabsorption. / Hwang, Heedon; Lee, Tae Wan; Moon, Youngboo et al.
1999. 268-271 Paper presented at Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, WA, Aust.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - In-situ observation of As/P exchange reaction and As carryover in InAs/InP quantum well structures by surface photoabsorption

AU - Hwang, Heedon

AU - Lee, Tae Wan

AU - Moon, Youngboo

AU - Yoon, Euijoon

AU - Kim, Young Dong

PY - 1999

Y1 - 1999

N2 - InAs/InP quantum well structures were grown by low pressure metal organic chemical vapor deposition. During the growth, As/P exchange reaction and As carryover were monitored in-situ by surface photoabsorption. We simulated the measured SPA signal using a multilayer model and effective medium theory to obtain As compositional profile which was carried over into the InP layer.

AB - InAs/InP quantum well structures were grown by low pressure metal organic chemical vapor deposition. During the growth, As/P exchange reaction and As carryover were monitored in-situ by surface photoabsorption. We simulated the measured SPA signal using a multilayer model and effective medium theory to obtain As compositional profile which was carried over into the InP layer.

UR - https://www.scopus.com/pages/publications/0032657959

M3 - Paper

AN - SCOPUS:0032657959

SP - 268

EP - 271

T2 - Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices

Y2 - 14 December 1998 through 16 December 1998

ER -

In-situ observation of As/P exchange reaction and As carryover in InAs/InP quantum well structures by surface photoabsorption

Abstract

Conference

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