Ink-jet-printed organic thin-film transistors for low-voltage-driven CMOS circuits with solution-processed AlOX gate insulator

Sung Hoon Kim; Sun Hee Lee; Youn Goo Kim; Jin Jang

doi:10.1109/LED.2012.2228461

Ink-jet-printed organic thin-film transistors for low-voltage-driven CMOS circuits with solution-processed AlO_X gate insulator

Sung Hoon Kim
, Sun Hee Lee
, Youn Goo Kim
, Jin Jang

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

We demonstrate low-voltage-driven complementary metal-oxide-semiconductor (CMOS) circuits using ink-jet-printed N, N ^′ bis-(octyl-)-dicyanoperylene-3, 4 : 9, 10-bis(dicarboximide) (PDI8CN2) for the n-channel TFT and 6,13-bis(triisopropylsilyl-ethynyl)pentacene (TIPS-pentacene) for the p-channel TFT with a solution-processed AlO_X gate dielectric. The CMOS inverter shows a gain of-95.3 V/V at V_DD of 2.5 V, and the ink-jet-printed seven-stage CMOS ring oscillator exhibits an oscillation frequency of 31.8 Hz and a propagation delay time of 2.24 ms/stage at V _DD of 4 V.

Original language	English
Article number	6392852
Pages (from-to)	307-309
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	2
DOIs	https://doi.org/10.1109/LED.2012.2228461
Publication status	Published - 2013

Keywords

Complementary metal-oxide-semiconductor (CMOS) integrated circuits
low-voltage
organic semiconductor (OSC)
solution process
thin-film transistor (TFT)

Access to Document

10.1109/LED.2012.2228461

Cite this

@article{0d60dc1b885f48a58f97aef145c0ccdb,

title = "Ink-jet-printed organic thin-film transistors for low-voltage-driven CMOS circuits with solution-processed AlOX gate insulator",

abstract = "We demonstrate low-voltage-driven complementary metal-oxide-semiconductor (CMOS) circuits using ink-jet-printed N, N ′ bis-(octyl-)-dicyanoperylene-3, 4 : 9, 10-bis(dicarboximide) (PDI8CN2) for the n-channel TFT and 6,13-bis(triisopropylsilyl-ethynyl)pentacene (TIPS-pentacene) for the p-channel TFT with a solution-processed AlOX gate dielectric. The CMOS inverter shows a gain of-95.3 V/V at VDD of 2.5 V, and the ink-jet-printed seven-stage CMOS ring oscillator exhibits an oscillation frequency of 31.8 Hz and a propagation delay time of 2.24 ms/stage at V DD of 4 V.",

keywords = "Complementary metal-oxide-semiconductor (CMOS) integrated circuits, low-voltage, organic semiconductor (OSC), solution process, thin-film transistor (TFT)",

author = "Kim, \{Sung Hoon\} and Lee, \{Sun Hee\} and Kim, \{Youn Goo\} and Jin Jang",

year = "2013",

doi = "10.1109/LED.2012.2228461",

language = "English",

volume = "34",

pages = "307--309",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - Ink-jet-printed organic thin-film transistors for low-voltage-driven CMOS circuits with solution-processed AlOX gate insulator

AU - Kim, Sung Hoon

AU - Lee, Sun Hee

AU - Kim, Youn Goo

AU - Jang, Jin

PY - 2013

Y1 - 2013

N2 - We demonstrate low-voltage-driven complementary metal-oxide-semiconductor (CMOS) circuits using ink-jet-printed N, N ′ bis-(octyl-)-dicyanoperylene-3, 4 : 9, 10-bis(dicarboximide) (PDI8CN2) for the n-channel TFT and 6,13-bis(triisopropylsilyl-ethynyl)pentacene (TIPS-pentacene) for the p-channel TFT with a solution-processed AlOX gate dielectric. The CMOS inverter shows a gain of-95.3 V/V at VDD of 2.5 V, and the ink-jet-printed seven-stage CMOS ring oscillator exhibits an oscillation frequency of 31.8 Hz and a propagation delay time of 2.24 ms/stage at V DD of 4 V.

AB - We demonstrate low-voltage-driven complementary metal-oxide-semiconductor (CMOS) circuits using ink-jet-printed N, N ′ bis-(octyl-)-dicyanoperylene-3, 4 : 9, 10-bis(dicarboximide) (PDI8CN2) for the n-channel TFT and 6,13-bis(triisopropylsilyl-ethynyl)pentacene (TIPS-pentacene) for the p-channel TFT with a solution-processed AlOX gate dielectric. The CMOS inverter shows a gain of-95.3 V/V at VDD of 2.5 V, and the ink-jet-printed seven-stage CMOS ring oscillator exhibits an oscillation frequency of 31.8 Hz and a propagation delay time of 2.24 ms/stage at V DD of 4 V.

KW - Complementary metal-oxide-semiconductor (CMOS) integrated circuits

KW - low-voltage

KW - organic semiconductor (OSC)

KW - solution process

KW - thin-film transistor (TFT)

UR - https://www.scopus.com/pages/publications/84873055415

U2 - 10.1109/LED.2012.2228461

DO - 10.1109/LED.2012.2228461

M3 - Article

AN - SCOPUS:84873055415

SN - 0741-3106

VL - 34

SP - 307

EP - 309

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

M1 - 6392852

ER -

Ink-jet-printed organic thin-film transistors for low-voltage-driven CMOS circuits with solution-processed AlO_X gate insulator

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this