Integration of CNT-FEAs with MOSFET on silicon substrate

Na Young Bae; Je Hwang Ryu; Han Eol Lim; Byoung Taek Son; Hye Mi Oh; Jin Jang; Kyu Chang Park

Integration of CNT-FEAs with MOSFET on silicon substrate

Na Young Bae, Je Hwang Ryu, Han Eol Lim, Byoung Taek Son, Hye Mi Oh, Jin Jang, Kyu Chang Park

Research output: Contribution to conference › Paper › peer-review

1 Citation (Scopus)

Abstract

An integration of CNT-FEAs grown with RAP process with MOSFET on silicon substrate has been proposed. The structure is very useful for active control of the emission current of CNT-FEAs. And shadow mask was adapted to simplify process. The feasibility of the integration was studied.

Original language	English
Pages	1481-1484
Number of pages	4
Publication status	Published - 2009
Event	16th International Display Workshops, IDW '09 - Miyazaki, Japan Duration: 9 Dec 2009 → 11 Dec 2009

Conference

Conference	16th International Display Workshops, IDW '09
Country/Territory	Japan
City	Miyazaki
Period	9/12/09 → 11/12/09

Cite this

@conference{1e66b860ba844ef5bbbce198c40348e0,

title = "Integration of CNT-FEAs with MOSFET on silicon substrate",

abstract = "An integration of CNT-FEAs grown with RAP process with MOSFET on silicon substrate has been proposed. The structure is very useful for active control of the emission current of CNT-FEAs. And shadow mask was adapted to simplify process. The feasibility of the integration was studied.",

author = "Bae, {Na Young} and Ryu, {Je Hwang} and Lim, {Han Eol} and Son, {Byoung Taek} and Oh, {Hye Mi} and Jin Jang and Park, {Kyu Chang}",

year = "2009",

language = "English",

pages = "1481--1484",

note = "16th International Display Workshops, IDW '09 ; Conference date: 09-12-2009 Through 11-12-2009",

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TY - CONF

T1 - Integration of CNT-FEAs with MOSFET on silicon substrate

AU - Bae, Na Young

AU - Ryu, Je Hwang

AU - Lim, Han Eol

AU - Son, Byoung Taek

AU - Oh, Hye Mi

AU - Jang, Jin

AU - Park, Kyu Chang

PY - 2009

Y1 - 2009

N2 - An integration of CNT-FEAs grown with RAP process with MOSFET on silicon substrate has been proposed. The structure is very useful for active control of the emission current of CNT-FEAs. And shadow mask was adapted to simplify process. The feasibility of the integration was studied.

AB - An integration of CNT-FEAs grown with RAP process with MOSFET on silicon substrate has been proposed. The structure is very useful for active control of the emission current of CNT-FEAs. And shadow mask was adapted to simplify process. The feasibility of the integration was studied.

UR - http://www.scopus.com/inward/record.url?scp=77954158579&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:77954158579

SP - 1481

EP - 1484

T2 - 16th International Display Workshops, IDW '09

Y2 - 9 December 2009 through 11 December 2009

ER -

Integration of CNT-FEAs with MOSFET on silicon substrate

Abstract

Conference

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