Interdiffusion and structural change in an InGaAs dots-in-a-well structure by rapid thermal annealing

Young Min Park; Young Ju Park; Kwang Moo Kim; Jin Dong Song; Jung I.I. Lee; Keon Ho Yoo; Hyung Seok Kim; Chan Gyung Park

doi:10.1063/1.1805191

Interdiffusion and structural change in an InGaAs dots-in-a-well structure by rapid thermal annealing

Young Min Park
, Young Ju Park
, Kwang Moo Kim
, Jin Dong Song
, Jung I.I. Lee
, Keon Ho Yoo
, Hyung Seok Kim
, Chan Gyung Park

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Post-growth rapid thermal annealing (RTA) has been used to investigate an interdiffusion and the structural change in an InGaAs dots-in-a-well (DWELL) structure grown by molecular beam epitaxy using an alternately supplying InAs and GaAs sources. In the case of the as-grown sample, which has a metastable quantum structure due to an intentional deficit of source materials, it is found that an InGaAs quantum well (QW) coexists with the premature quantum dots (QDs), and an intermediate layer exists between the QW and the QDs. Through the RTA process at 600 and 800°C for 30 s, metastable structure changes into a normal DWELL structure composed of QDs and QW as a result of the intermixing of premature QDs and the intermediate layer.

Original language	English
Pages (from-to)	5496-5499
Number of pages	4
Journal	Journal of Applied Physics
Volume	96
Issue number	10
DOIs	https://doi.org/10.1063/1.1805191
Publication status	Published - 15 Nov 2004

Bibliographical note

Funding Information:
This work was supported by the Nanostructure Technology Project (Contract No. M1-0221-00-0005), by the basic research program of the KOSEF (Grant No. R01-2000-00027), and by the Nano R&D program of MOST.

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10.1063/1.1805191

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@article{496921f8ec6b438bbea56c973ceb0597,

title = "Interdiffusion and structural change in an InGaAs dots-in-a-well structure by rapid thermal annealing",

abstract = "Post-growth rapid thermal annealing (RTA) has been used to investigate an interdiffusion and the structural change in an InGaAs dots-in-a-well (DWELL) structure grown by molecular beam epitaxy using an alternately supplying InAs and GaAs sources. In the case of the as-grown sample, which has a metastable quantum structure due to an intentional deficit of source materials, it is found that an InGaAs quantum well (QW) coexists with the premature quantum dots (QDs), and an intermediate layer exists between the QW and the QDs. Through the RTA process at 600 and 800°C for 30 s, metastable structure changes into a normal DWELL structure composed of QDs and QW as a result of the intermixing of premature QDs and the intermediate layer.",

author = "Park, \{Young Min\} and Park, \{Young Ju\} and Kim, \{Kwang Moo\} and Song, \{Jin Dong\} and Lee, \{Jung I.I.\} and Yoo, \{Keon Ho\} and Kim, \{Hyung Seok\} and Park, \{Chan Gyung\}",

note = "Funding Information: This work was supported by the Nanostructure Technology Project (Contract No. M1-0221-00-0005), by the basic research program of the KOSEF (Grant No. R01-2000-00027), and by the Nano R\&D program of MOST. ",

year = "2004",

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doi = "10.1063/1.1805191",

language = "English",

volume = "96",

pages = "5496--5499",

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T1 - Interdiffusion and structural change in an InGaAs dots-in-a-well structure by rapid thermal annealing

AU - Park, Young Min

AU - Park, Young Ju

AU - Kim, Kwang Moo

AU - Song, Jin Dong

AU - Lee, Jung I.I.

AU - Yoo, Keon Ho

AU - Kim, Hyung Seok

AU - Park, Chan Gyung

N1 - Funding Information: This work was supported by the Nanostructure Technology Project (Contract No. M1-0221-00-0005), by the basic research program of the KOSEF (Grant No. R01-2000-00027), and by the Nano R&D program of MOST.

PY - 2004/11/15

Y1 - 2004/11/15

N2 - Post-growth rapid thermal annealing (RTA) has been used to investigate an interdiffusion and the structural change in an InGaAs dots-in-a-well (DWELL) structure grown by molecular beam epitaxy using an alternately supplying InAs and GaAs sources. In the case of the as-grown sample, which has a metastable quantum structure due to an intentional deficit of source materials, it is found that an InGaAs quantum well (QW) coexists with the premature quantum dots (QDs), and an intermediate layer exists between the QW and the QDs. Through the RTA process at 600 and 800°C for 30 s, metastable structure changes into a normal DWELL structure composed of QDs and QW as a result of the intermixing of premature QDs and the intermediate layer.

AB - Post-growth rapid thermal annealing (RTA) has been used to investigate an interdiffusion and the structural change in an InGaAs dots-in-a-well (DWELL) structure grown by molecular beam epitaxy using an alternately supplying InAs and GaAs sources. In the case of the as-grown sample, which has a metastable quantum structure due to an intentional deficit of source materials, it is found that an InGaAs quantum well (QW) coexists with the premature quantum dots (QDs), and an intermediate layer exists between the QW and the QDs. Through the RTA process at 600 and 800°C for 30 s, metastable structure changes into a normal DWELL structure composed of QDs and QW as a result of the intermixing of premature QDs and the intermediate layer.

UR - https://www.scopus.com/pages/publications/9944251507

U2 - 10.1063/1.1805191

DO - 10.1063/1.1805191

M3 - Article

AN - SCOPUS:9944251507

SN - 0021-8979

VL - 96

SP - 5496

EP - 5499

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

ER -

Interdiffusion and structural change in an InGaAs dots-in-a-well structure by rapid thermal annealing

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Bibliographical note

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