Abstract
This paper reviews the inverted quantum-dot light emitting diodes (QLEDs) using solution processed metal-oxide electron transport layer (ETL). The inverted QLED is designed with single, double and triple ETLs, and the ETLs reduced exciton loss at interface of ETL/emissive layer (EML) and increased the conductivity for the efficient electron injection.
| Original language | English |
|---|---|
| Title of host publication | 22nd International Display Workshops, IDW 2015 |
| Publisher | International Display Workshops |
| Pages | 1562-1565 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781510845503 |
| Publication status | Published - 2015 |
| Event | 22nd International Display Workshops, IDW 2015 - Otsu, Japan Duration: 9 Dec 2015 → 11 Dec 2015 |
Publication series
| Name | Proceedings of the International Display Workshops |
|---|---|
| Volume | 3 |
| ISSN (Print) | 1883-2490 |
Conference
| Conference | 22nd International Display Workshops, IDW 2015 |
|---|---|
| Country/Territory | Japan |
| City | Otsu |
| Period | 9/12/15 → 11/12/15 |
Bibliographical note
Publisher Copyright:© 2015 Proceedings of the International Display Workshops. All rights reserved.
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 3 Good Health and Well-being
Keywords
- Inverted structure
- QLED
- Quantum-dot
- Solution process
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