Ion doping effect in laser crystallized polycrystalline silicon

Ki Hyung Kim; Soo Young Yoon; Chae Ok Kim; Jin Jang

Ion doping effect in laser crystallized polycrystalline silicon

Ki Hyung Kim
, Soo Young Yoon
, Chae Ok Kim
, Jin Jang

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The annealing effect on the sheet resistance of ion-doped laser crystallized poly-Si films has been studied. The role of hydrogen in the n-type poly-Si is related to defect passivation dominantly rather than dopant passivation. But the dopant neutralization by hydrogen is predominant in p-type poly-Si. On the other hand, the sheet resistance of the poly-Si decreases with increasing doping temperature due to less damage on the crystalline structure.

Original language	English
Pages (from-to)	S231-S235
Journal	Journal of the Korean Physical Society
Volume	30
Issue number	SUPPL. PART 1
Publication status	Published - 1997

Cite this

@article{d1266ce59f2344f8ad290d394184305a,

title = "Ion doping effect in laser crystallized polycrystalline silicon",

abstract = "The annealing effect on the sheet resistance of ion-doped laser crystallized poly-Si films has been studied. The role of hydrogen in the n-type poly-Si is related to defect passivation dominantly rather than dopant passivation. But the dopant neutralization by hydrogen is predominant in p-type poly-Si. On the other hand, the sheet resistance of the poly-Si decreases with increasing doping temperature due to less damage on the crystalline structure.",

author = "Kim, \{Ki Hyung\} and Yoon, \{Soo Young\} and Kim, \{Chae Ok\} and Jin Jang",

year = "1997",

language = "English",

volume = "30",

pages = "S231--S235",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "SUPPL. PART 1",

}

TY - JOUR

T1 - Ion doping effect in laser crystallized polycrystalline silicon

AU - Kim, Ki Hyung

AU - Yoon, Soo Young

AU - Kim, Chae Ok

AU - Jang, Jin

PY - 1997

Y1 - 1997

N2 - The annealing effect on the sheet resistance of ion-doped laser crystallized poly-Si films has been studied. The role of hydrogen in the n-type poly-Si is related to defect passivation dominantly rather than dopant passivation. But the dopant neutralization by hydrogen is predominant in p-type poly-Si. On the other hand, the sheet resistance of the poly-Si decreases with increasing doping temperature due to less damage on the crystalline structure.

AB - The annealing effect on the sheet resistance of ion-doped laser crystallized poly-Si films has been studied. The role of hydrogen in the n-type poly-Si is related to defect passivation dominantly rather than dopant passivation. But the dopant neutralization by hydrogen is predominant in p-type poly-Si. On the other hand, the sheet resistance of the poly-Si decreases with increasing doping temperature due to less damage on the crystalline structure.

UR - https://www.scopus.com/pages/publications/4243499603

M3 - Article

AN - SCOPUS:4243499603

SN - 0374-4884

VL - 30

SP - S231-S235

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - SUPPL. PART 1

ER -

Ion doping effect in laser crystallized polycrystalline silicon

Abstract

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