Laser field induced optical gain in a group III-V quantum wire

Abstract: Effect of intense high frequency laser field on the electronic and optical properties ofheavy hole exciton in an InAsP/InP quantum well wire is investigated taking intoconsideration of the spatial confinement. Laser field induced exciton binding energies,optical band gap, oscillator strength and the optical gain in the InAs_0.8P_0.2/InP quantum well wire arestudied. The variational formulism is applied to find the respective energies. The laserfield induced optical properties are studied. The optical gain as a function of photonenergy, in the InAs_0.8P_0.2/InP quantum wire, is obtained in the presence ofintense laser field. The compact density matrix method is employed to obtain the opticalgain. The results show that the 1.55 μm wavelength for the fibre optic telecommunicationapplications is achieved for 45 Å wire radius in the absence of laser field intensitywhereas the 1.55 μm wavelength is obtained for 40 Å if the amplitudeof the laser field amplitude parameter is 50 Å. The characterizing wavelength fortelecommunication network is optimized when the intense laser field is applied for thesystem. It is hoped that the obtained optical gain in the group III-V narrow quantum wirecan be applied for fabricating laser sources for achieving the preferred telecommunicationwavelength. Graphical abstract: [Figure not available: see fulltext.]