Learning-induced synaptic potentiation in implanted neural precursor cell-derived neurons

Kyungjoon Park, Hwon Heo, Ma Eum Han, Kyuhyun Choi, Jee Hyun Yi, Shin Jung Kang, Yunhee Kim Kwon, Ki Soon Shin

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

Neuronal loss caused by neurodegenerative diseases, traumatic brain injury and stroke results in cognitive dysfunctioning. Implantation of neural stem/precursor cells (NPCs) can improve the brain function by replacing lost neurons. Proper synaptic integration following neuronal differentiation of implanted cells is believed to be a prerequisite for the functional recovery. In the present study, we characterized the functional properties of immortalized neural progenitor HiB5 cells implanted into the rat hippocampus with chemically induced lesion. The implanted HiB5 cells migrated toward CA1 pyramidal layer and differentiated into vGluT1-positive glutamatergic neurons with morphological and electrophysiological properties of endogenous CA1 pyramidal cells. Functional synaptic integration of HiB5 cell-derived neurons was also evidenced by immunohistochemical and electrophysiological data. Lesion-caused memory deficit was significantly recovered after the implantation when assessed by inhibitory avoidance (IA) learning. Remarkably, IA learning preferentially produced long-term potentiation (LTP) at the synapses onto HiB5 cell-derived neurons, which occluded paring protocol-induced LTP ex vivo. We conclude that the implanted HiB5 cell-derived neurons actively participate in learning process through LTP formation, thereby counteracting lesion-mediated memory impairment.

Original languageEnglish
Article number17796
JournalScientific Reports
Volume5
DOIs
Publication statusPublished - 4 Dec 2015

Bibliographical note

Funding Information:
This research was supported by Basic Science Research Program through the NRF funded by the Ministry of Sciences, ICT & Future Planning (NRF-2012M3A9C6049934, NRF-2012M3A9C6049937, NRF-2012R1A2A2A01015843, 2011-0019354, 2015R1A5A1037656 and NRF-2014R1A2A1A11050360).

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