Light-induced effects in hydrogenated amorphous silicon at low temperatures

Choochon Lee, Jong Hwan Yoon, Jin Jang

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Photoluminescence (PL) intensity and luminescence fatigue with illumination time and annealing in a-Si:H have been measured at various temperatures. The results show that the luminescence fatigue is minimum at 150K and there exist at least two kinds of defect or trap at low temperatures, giving rise to opposite light-soaking effect each other. The results are interpreted in terms of the change in band bending caused by optically induced defect or surface states at the native oxide layer of a-Si:H.

Original languageEnglish
Pages (from-to)393-396
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume77-78
Issue numberPART 1
DOIs
Publication statusPublished - 2 Dec 1985

Fingerprint

Dive into the research topics of 'Light-induced effects in hydrogenated amorphous silicon at low temperatures'. Together they form a unique fingerprint.

Cite this