Local strain relaxation in Si0.7Ge0.3 on Si(001) induced by Ga+ irradiation

Chinkyo Kim; I. K. Robinson; T. Spila; J. E. Greene

doi:10.1063/1.367876

Local strain relaxation in Si_0.7Ge_0.3 on Si(001) induced by Ga⁺ irradiation

Chinkyo Kim, I. K. Robinson, T. Spila, J. E. Greene

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

A strained pseudomorphic Si_0.7Ge_0.3 film grown by gas-source molecular-beam epitaxy on Si(001) was irradiated at room temperature with 25 keV Ga⁺ ions. The gradual strain relaxation of the metastable Si_0.7Ge_0.3 film was monitored using in situ x-ray diffraction as a function of dose. Based on a dimensional argument, the ion-induced damage scales as extended defects. The Hendricks-Teller model was successfully applied to explain the shifting and broadening of the additional diffuse scattering.

Original language	English
Pages (from-to)	7608-7612
Number of pages	5
Journal	Journal of Applied Physics
Volume	83
Issue number	12
DOIs	https://doi.org/10.1063/1.367876
Publication status	Published - 15 Jun 1998

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@article{45b551343d2441068c3d27f0a49d5663,

title = "Local strain relaxation in Si0.7Ge0.3 on Si(001) induced by Ga+ irradiation",

abstract = "A strained pseudomorphic Si0.7Ge0.3 film grown by gas-source molecular-beam epitaxy on Si(001) was irradiated at room temperature with 25 keV Ga+ ions. The gradual strain relaxation of the metastable Si0.7Ge0.3 film was monitored using in situ x-ray diffraction as a function of dose. Based on a dimensional argument, the ion-induced damage scales as extended defects. The Hendricks-Teller model was successfully applied to explain the shifting and broadening of the additional diffuse scattering.",

author = "Chinkyo Kim and Robinson, {I. K.} and T. Spila and Greene, {J. E.}",

year = "1998",

month = jun,

day = "15",

doi = "10.1063/1.367876",

language = "English",

volume = "83",

pages = "7608--7612",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Local strain relaxation in Si0.7Ge0.3 on Si(001) induced by Ga+ irradiation

AU - Kim, Chinkyo

AU - Robinson, I. K.

AU - Spila, T.

AU - Greene, J. E.

PY - 1998/6/15

Y1 - 1998/6/15

N2 - A strained pseudomorphic Si0.7Ge0.3 film grown by gas-source molecular-beam epitaxy on Si(001) was irradiated at room temperature with 25 keV Ga+ ions. The gradual strain relaxation of the metastable Si0.7Ge0.3 film was monitored using in situ x-ray diffraction as a function of dose. Based on a dimensional argument, the ion-induced damage scales as extended defects. The Hendricks-Teller model was successfully applied to explain the shifting and broadening of the additional diffuse scattering.

AB - A strained pseudomorphic Si0.7Ge0.3 film grown by gas-source molecular-beam epitaxy on Si(001) was irradiated at room temperature with 25 keV Ga+ ions. The gradual strain relaxation of the metastable Si0.7Ge0.3 film was monitored using in situ x-ray diffraction as a function of dose. Based on a dimensional argument, the ion-induced damage scales as extended defects. The Hendricks-Teller model was successfully applied to explain the shifting and broadening of the additional diffuse scattering.

UR - http://www.scopus.com/inward/record.url?scp=0347908503&partnerID=8YFLogxK

U2 - 10.1063/1.367876

DO - 10.1063/1.367876

M3 - Article

AN - SCOPUS:0347908503

SN - 0021-8979

VL - 83

SP - 7608

EP - 7612

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

ER -

Local strain relaxation in Si_0.7Ge_0.3 on Si(001) induced by Ga⁺ irradiation

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