Local strain relaxation in Si0.7Ge0.3 on Si(001) induced by Ga+ irradiation

Chinkyo Kim; I. K. Robinson; T. Spila; J. E. Greene

doi:10.1063/1.367876

Local strain relaxation in Si_0.7Ge_0.3 on Si(001) induced by Ga⁺ irradiation

Chinkyo Kim
, I. K. Robinson
, T. Spila
, J. E. Greene

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

A strained pseudomorphic Si_0.7Ge_0.3 film grown by gas-source molecular-beam epitaxy on Si(001) was irradiated at room temperature with 25 keV Ga⁺ ions. The gradual strain relaxation of the metastable Si_0.7Ge_0.3 film was monitored using in situ x-ray diffraction as a function of dose. Based on a dimensional argument, the ion-induced damage scales as extended defects. The Hendricks-Teller model was successfully applied to explain the shifting and broadening of the additional diffuse scattering.

Original language	English
Pages (from-to)	7608-7612
Number of pages	5
Journal	Journal of Applied Physics
Volume	83
Issue number	12
DOIs	https://doi.org/10.1063/1.367876
Publication status	Published - 15 Jun 1998

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title = "Local strain relaxation in Si0.7Ge0.3 on Si(001) induced by Ga+ irradiation",

abstract = "A strained pseudomorphic Si0.7Ge0.3 film grown by gas-source molecular-beam epitaxy on Si(001) was irradiated at room temperature with 25 keV Ga+ ions. The gradual strain relaxation of the metastable Si0.7Ge0.3 film was monitored using in situ x-ray diffraction as a function of dose. Based on a dimensional argument, the ion-induced damage scales as extended defects. The Hendricks-Teller model was successfully applied to explain the shifting and broadening of the additional diffuse scattering.",

author = "Chinkyo Kim and Robinson, \{I. K.\} and T. Spila and Greene, \{J. E.\}",

year = "1998",

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AU - Kim, Chinkyo

AU - Robinson, I. K.

AU - Spila, T.

AU - Greene, J. E.

PY - 1998/6/15

Y1 - 1998/6/15

N2 - A strained pseudomorphic Si0.7Ge0.3 film grown by gas-source molecular-beam epitaxy on Si(001) was irradiated at room temperature with 25 keV Ga+ ions. The gradual strain relaxation of the metastable Si0.7Ge0.3 film was monitored using in situ x-ray diffraction as a function of dose. Based on a dimensional argument, the ion-induced damage scales as extended defects. The Hendricks-Teller model was successfully applied to explain the shifting and broadening of the additional diffuse scattering.

AB - A strained pseudomorphic Si0.7Ge0.3 film grown by gas-source molecular-beam epitaxy on Si(001) was irradiated at room temperature with 25 keV Ga+ ions. The gradual strain relaxation of the metastable Si0.7Ge0.3 film was monitored using in situ x-ray diffraction as a function of dose. Based on a dimensional argument, the ion-induced damage scales as extended defects. The Hendricks-Teller model was successfully applied to explain the shifting and broadening of the additional diffuse scattering.

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U2 - 10.1063/1.367876

DO - 10.1063/1.367876

M3 - Article

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SN - 0021-8979

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EP - 7612

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

ER -

Local strain relaxation in Si_0.7Ge_0.3 on Si(001) induced by Ga⁺ irradiation

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