Long-range ordering of GaN nano-grains grown on vicinal sapphire substrates

Hyeokmin Choe; Sanghwa Lee; Boa Shin; Chinkyo Kim

doi:10.1016/j.jcrysgro.2008.04.012

Long-range ordering of GaN nano-grains grown on vicinal sapphire substrates

Hyeokmin Choe, Sanghwa Lee, Boa Shin, Chinkyo Kim

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

GaN nano-grains were grown on nominally 0.3°-miscut (0 0 0 1) sapphire substrates by hydride vapor phase epitaxy (HVPE). Ordering behavior of the nano-grains was investigated by utilizing scanning electron microscopy (SEM) and synchrotron X-ray scattering. SEM images and synchrotron X-ray scattering measurement revealed that the nano-grains were nucleated with long-range ordering along the sapphire [1 0 over(1, -) 0], which is the same as the miscut direction. With an increased growth time the nano-grains gradually coalesced, but the long-range ordering was still observed even after completion of the coalescence.

Original language	English
Pages (from-to)	3278-3281
Number of pages	4
Journal	Journal of Crystal Growth
Volume	310
Issue number	14
DOIs	https://doi.org/10.1016/j.jcrysgro.2008.04.012
Publication status	Published - 1 Jul 2008

Bibliographical note

Funding Information:
This work was supported in part by the Seoul Research and Business Development Program-Grant no. 10583.

Keywords

A1. Nucleation
A1. X-ray diffraction
A3. Hydride vapor phase epitaxy
B1. Nitrides
B2. Semiconducting III-V materials

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10.1016/j.jcrysgro.2008.04.012

Cite this

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title = "Long-range ordering of GaN nano-grains grown on vicinal sapphire substrates",

abstract = "GaN nano-grains were grown on nominally 0.3°-miscut (0 0 0 1) sapphire substrates by hydride vapor phase epitaxy (HVPE). Ordering behavior of the nano-grains was investigated by utilizing scanning electron microscopy (SEM) and synchrotron X-ray scattering. SEM images and synchrotron X-ray scattering measurement revealed that the nano-grains were nucleated with long-range ordering along the sapphire [1 0 over(1, -) 0], which is the same as the miscut direction. With an increased growth time the nano-grains gradually coalesced, but the long-range ordering was still observed even after completion of the coalescence.",

keywords = "A1. Nucleation, A1. X-ray diffraction, A3. Hydride vapor phase epitaxy, B1. Nitrides, B2. Semiconducting III-V materials",

author = "Hyeokmin Choe and Sanghwa Lee and Boa Shin and Chinkyo Kim",

note = "Funding Information: This work was supported in part by the Seoul Research and Business Development Program-Grant no. 10583.",

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doi = "10.1016/j.jcrysgro.2008.04.012",

language = "English",

volume = "310",

pages = "3278--3281",

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T1 - Long-range ordering of GaN nano-grains grown on vicinal sapphire substrates

AU - Choe, Hyeokmin

AU - Lee, Sanghwa

AU - Shin, Boa

AU - Kim, Chinkyo

N1 - Funding Information: This work was supported in part by the Seoul Research and Business Development Program-Grant no. 10583.

PY - 2008/7/1

Y1 - 2008/7/1

N2 - GaN nano-grains were grown on nominally 0.3°-miscut (0 0 0 1) sapphire substrates by hydride vapor phase epitaxy (HVPE). Ordering behavior of the nano-grains was investigated by utilizing scanning electron microscopy (SEM) and synchrotron X-ray scattering. SEM images and synchrotron X-ray scattering measurement revealed that the nano-grains were nucleated with long-range ordering along the sapphire [1 0 over(1, -) 0], which is the same as the miscut direction. With an increased growth time the nano-grains gradually coalesced, but the long-range ordering was still observed even after completion of the coalescence.

AB - GaN nano-grains were grown on nominally 0.3°-miscut (0 0 0 1) sapphire substrates by hydride vapor phase epitaxy (HVPE). Ordering behavior of the nano-grains was investigated by utilizing scanning electron microscopy (SEM) and synchrotron X-ray scattering. SEM images and synchrotron X-ray scattering measurement revealed that the nano-grains were nucleated with long-range ordering along the sapphire [1 0 over(1, -) 0], which is the same as the miscut direction. With an increased growth time the nano-grains gradually coalesced, but the long-range ordering was still observed even after completion of the coalescence.

KW - A1. Nucleation

KW - A1. X-ray diffraction

KW - A3. Hydride vapor phase epitaxy

KW - B1. Nitrides

KW - B2. Semiconducting III-V materials

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DO - 10.1016/j.jcrysgro.2008.04.012

M3 - Article

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SN - 0022-0248

VL - 310

SP - 3278

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JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 14

ER -

Long-range ordering of GaN nano-grains grown on vicinal sapphire substrates

Abstract

Bibliographical note

Keywords

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