Low cost manufacturing of alzno/zno thin film transistor with high mobility over 80 cm2/vs and positive threshold voltage by spray pyrolysis

Jewel Kumer Saha; Arqum Ali; Md Mobaidul Islam; Ravindra Naik Bukke; Jin Jang

doi:10.1002/sdtp.14615

Low cost manufacturing of alzno/zno thin film transistor with high mobility over 80 cm2/vs and positive threshold voltage by spray pyrolysis

Jewel Kumer Saha, Arqum Ali, Md Mobaidul Islam, Ravindra Naik Bukke, Jin Jang

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

We demonstrate the low-cost AlZnO/ZnO TFT by spray pyrolysis at 350^oC. High field-effect mobility is achieved over 80 cm²/V.s with a subthreshold slope of 123 mV/decade. The higher mobility is due to the 2D like electron gas at the interface of AlZnO/ZnO. The stack TFT shows positive threshold voltage and negligible threshold voltage shift under positive bias stress. The presence of Al-O at the interface reduces the oxygen vacancies and improves the bias stability.

Original language	English
Pages (from-to)	81-84
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	52
Issue number	1
DOIs	https://doi.org/10.1002/sdtp.14615
Publication status	Published - 2021
Event	58th International Symposium on Digest of Technical Papers, ICDT 2021 - Virtual, Online Duration: 17 May 2021 → 21 May 2021

Bibliographical note

Publisher Copyright:
© 2021 SID.

Keywords

2DEG
AlZnO/ZnO
Spray pyrolysis
Stack TFT
ZnO

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10.1002/sdtp.14615

Cite this

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title = "Low cost manufacturing of alzno/zno thin film transistor with high mobility over 80 cm2/vs and positive threshold voltage by spray pyrolysis",

abstract = "We demonstrate the low-cost AlZnO/ZnO TFT by spray pyrolysis at 350oC. High field-effect mobility is achieved over 80 cm2/V.s with a subthreshold slope of 123 mV/decade. The higher mobility is due to the 2D like electron gas at the interface of AlZnO/ZnO. The stack TFT shows positive threshold voltage and negligible threshold voltage shift under positive bias stress. The presence of Al-O at the interface reduces the oxygen vacancies and improves the bias stability.",

keywords = "2DEG, AlZnO/ZnO, Spray pyrolysis, Stack TFT, ZnO",

author = "Saha, {Jewel Kumer} and Arqum Ali and Islam, {Md Mobaidul} and Bukke, {Ravindra Naik} and Jin Jang",

note = "Publisher Copyright: {\textcopyright} 2021 SID.; 58th International Symposium on Digest of Technical Papers, ICDT 2021 ; Conference date: 17-05-2021 Through 21-05-2021",

year = "2021",

doi = "10.1002/sdtp.14615",

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Low cost manufacturing of alzno/zno thin film transistor with high mobility over 80 cm2/vs and positive threshold voltage by spray pyrolysis. / Saha, Jewel Kumer; Ali, Arqum; Islam, Md Mobaidul et al.
In: Digest of Technical Papers - SID International Symposium, Vol. 52, No. 1, 2021, p. 81-84.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Low cost manufacturing of alzno/zno thin film transistor with high mobility over 80 cm2/vs and positive threshold voltage by spray pyrolysis

AU - Saha, Jewel Kumer

AU - Ali, Arqum

AU - Islam, Md Mobaidul

AU - Bukke, Ravindra Naik

AU - Jang, Jin

PY - 2021

Y1 - 2021

N2 - We demonstrate the low-cost AlZnO/ZnO TFT by spray pyrolysis at 350oC. High field-effect mobility is achieved over 80 cm2/V.s with a subthreshold slope of 123 mV/decade. The higher mobility is due to the 2D like electron gas at the interface of AlZnO/ZnO. The stack TFT shows positive threshold voltage and negligible threshold voltage shift under positive bias stress. The presence of Al-O at the interface reduces the oxygen vacancies and improves the bias stability.

AB - We demonstrate the low-cost AlZnO/ZnO TFT by spray pyrolysis at 350oC. High field-effect mobility is achieved over 80 cm2/V.s with a subthreshold slope of 123 mV/decade. The higher mobility is due to the 2D like electron gas at the interface of AlZnO/ZnO. The stack TFT shows positive threshold voltage and negligible threshold voltage shift under positive bias stress. The presence of Al-O at the interface reduces the oxygen vacancies and improves the bias stability.

KW - 2DEG

KW - AlZnO/ZnO

KW - Spray pyrolysis

KW - Stack TFT

KW - ZnO

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VL - 52

SP - 81

EP - 84

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 1

T2 - 58th International Symposium on Digest of Technical Papers, ICDT 2021

Y2 - 17 May 2021 through 21 May 2021

ER -

Low cost manufacturing of alzno/zno thin film transistor with high mobility over 80 cm2/vs and positive threshold voltage by spray pyrolysis

Abstract

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Keywords

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