Low-resistivity Cu film electrodeposited with 3-N,N- dimethylaminodithiocarbamoyl-1-propanesulfonate for the application to the interconnection of electronic devices

Sung Ki Cho; Myung Jun Kim; Hyo Chol Koo; Oh Joong Kwon; Jae Jeong Kim

doi:10.1016/j.tsf.2011.09.015

Low-resistivity Cu film electrodeposited with 3-N,N- dimethylaminodithiocarbamoyl-1-propanesulfonate for the application to the interconnection of electronic devices

Sung Ki Cho
, Myung Jun Kim
, Hyo Chol Koo
, Oh Joong Kwon
, Jae Jeong Kim

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

In this study, we analyzed the properties of Cu films electrodeposited with 3-N,N-dimethylaminodithiocarbamoyl-1-propanesulfonate (DPS) as an organic additive in damascene Cu electrodeposition, in comparison with bis(sulfopropyl) disulfide (SPS). It was observed that the resistivity of Cu film electrodeposited with DPS was lower than that with SPS. Spectroscopic analyses showed that the impurity level and crystallinity of Cu films are almost the same, but the difference was found in the film roughness. Low roughness of Cu film electrodeposited with DPS led to the low resistivity, and it was speculated that the low roughness is related to the strong adsorption through the nitrogen atom in the DPS molecule.

Original language	English
Pages (from-to)	2136-2141
Number of pages	6
Journal	Thin Solid Films
Volume	520
Issue number	6
DOIs	https://doi.org/10.1016/j.tsf.2011.09.015
Publication status	Published - 1 Jan 2012

Bibliographical note

Funding Information:
This work was supported by the Korea Science and Engineering Foundation (KOSEF) through the Research Center for Energy Conversion and Storage (RCECS) and through the Nano R&D program funded by the Ministry of Education, Science and Technology ( 2009-0083223 ). It was also supported by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Commerce, Industry and Energy, Republic of Korea.

Keywords

3-N,N- dimethylaminodithiocarbamoyl-1-propanesulfonate
Cu electrodeposition
Cu resistivity
Interconnection

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10.1016/j.tsf.2011.09.015

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title = "Low-resistivity Cu film electrodeposited with 3-N,N- dimethylaminodithiocarbamoyl-1-propanesulfonate for the application to the interconnection of electronic devices",

abstract = "In this study, we analyzed the properties of Cu films electrodeposited with 3-N,N-dimethylaminodithiocarbamoyl-1-propanesulfonate (DPS) as an organic additive in damascene Cu electrodeposition, in comparison with bis(sulfopropyl) disulfide (SPS). It was observed that the resistivity of Cu film electrodeposited with DPS was lower than that with SPS. Spectroscopic analyses showed that the impurity level and crystallinity of Cu films are almost the same, but the difference was found in the film roughness. Low roughness of Cu film electrodeposited with DPS led to the low resistivity, and it was speculated that the low roughness is related to the strong adsorption through the nitrogen atom in the DPS molecule.",

keywords = "3-N,N- dimethylaminodithiocarbamoyl-1-propanesulfonate, Cu electrodeposition, Cu resistivity, Interconnection",

author = "Cho, \{Sung Ki\} and Kim, \{Myung Jun\} and Koo, \{Hyo Chol\} and Kwon, \{Oh Joong\} and Kim, \{Jae Jeong\}",

note = "Funding Information: This work was supported by the Korea Science and Engineering Foundation (KOSEF) through the Research Center for Energy Conversion and Storage (RCECS) and through the Nano R\&D program funded by the Ministry of Education, Science and Technology ( 2009-0083223 ). It was also supported by a grant from the Fundamental R\&D Program for Core Technology of Materials funded by the Ministry of Commerce, Industry and Energy, Republic of Korea.",

year = "2012",

month = jan,

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doi = "10.1016/j.tsf.2011.09.015",

language = "English",

volume = "520",

pages = "2136--2141",

journal = "Thin Solid Films",

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T1 - Low-resistivity Cu film electrodeposited with 3-N,N- dimethylaminodithiocarbamoyl-1-propanesulfonate for the application to the interconnection of electronic devices

AU - Cho, Sung Ki

AU - Kim, Myung Jun

AU - Koo, Hyo Chol

AU - Kwon, Oh Joong

AU - Kim, Jae Jeong

N1 - Funding Information: This work was supported by the Korea Science and Engineering Foundation (KOSEF) through the Research Center for Energy Conversion and Storage (RCECS) and through the Nano R&D program funded by the Ministry of Education, Science and Technology ( 2009-0083223 ). It was also supported by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Commerce, Industry and Energy, Republic of Korea.

PY - 2012/1/1

Y1 - 2012/1/1

N2 - In this study, we analyzed the properties of Cu films electrodeposited with 3-N,N-dimethylaminodithiocarbamoyl-1-propanesulfonate (DPS) as an organic additive in damascene Cu electrodeposition, in comparison with bis(sulfopropyl) disulfide (SPS). It was observed that the resistivity of Cu film electrodeposited with DPS was lower than that with SPS. Spectroscopic analyses showed that the impurity level and crystallinity of Cu films are almost the same, but the difference was found in the film roughness. Low roughness of Cu film electrodeposited with DPS led to the low resistivity, and it was speculated that the low roughness is related to the strong adsorption through the nitrogen atom in the DPS molecule.

AB - In this study, we analyzed the properties of Cu films electrodeposited with 3-N,N-dimethylaminodithiocarbamoyl-1-propanesulfonate (DPS) as an organic additive in damascene Cu electrodeposition, in comparison with bis(sulfopropyl) disulfide (SPS). It was observed that the resistivity of Cu film electrodeposited with DPS was lower than that with SPS. Spectroscopic analyses showed that the impurity level and crystallinity of Cu films are almost the same, but the difference was found in the film roughness. Low roughness of Cu film electrodeposited with DPS led to the low resistivity, and it was speculated that the low roughness is related to the strong adsorption through the nitrogen atom in the DPS molecule.

KW - 3-N,N- dimethylaminodithiocarbamoyl-1-propanesulfonate

KW - Cu electrodeposition

KW - Cu resistivity

KW - Interconnection

UR - https://www.scopus.com/pages/publications/84855950321

U2 - 10.1016/j.tsf.2011.09.015

DO - 10.1016/j.tsf.2011.09.015

M3 - Article

AN - SCOPUS:84855950321

SN - 0040-6090

VL - 520

SP - 2136

EP - 2141

JO - Thin Solid Films

JF - Thin Solid Films

IS - 6

ER -

Low-resistivity Cu film electrodeposited with 3-N,N- dimethylaminodithiocarbamoyl-1-propanesulfonate for the application to the interconnection of electronic devices

Abstract

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Keywords

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