TY - GEN
T1 - Low temperature epitaxial growth of thin film silicon by PECVD for use in solar cell applications
AU - Won, Dong Hyun
AU - Park, Min Ho
AU - Jang, Jin
N1 - Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.
PY - 2011
Y1 - 2011
N2 - We report a novel method of growing crystalline silicon layers by plasma enhanced chemical vapor deposition (PECVD) at 340° for solar cell application. Flash lamp annealing method was used for the seed formation on glass [1]. We optimized the precursor a-Si thickness to achieve 100% crystalline volume fraction with a large grain > 10 um. The proper surface treatment was found to be essential for the growth of an epitaxial layer on a poly-Si seed layer.
AB - We report a novel method of growing crystalline silicon layers by plasma enhanced chemical vapor deposition (PECVD) at 340° for solar cell application. Flash lamp annealing method was used for the seed formation on glass [1]. We optimized the precursor a-Si thickness to achieve 100% crystalline volume fraction with a large grain > 10 um. The proper surface treatment was found to be essential for the growth of an epitaxial layer on a poly-Si seed layer.
UR - http://www.scopus.com/inward/record.url?scp=84861057289&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2011.6186596
DO - 10.1109/PVSC.2011.6186596
M3 - Conference contribution
AN - SCOPUS:84861057289
SN - 9781424499656
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 3084
EP - 3086
BT - Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
T2 - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Y2 - 19 June 2011 through 24 June 2011
ER -