Low temperature fabrication of APCVD a-Si thin film transistors with ion doped layer

Kyung Ha Lee; Jae Ho Yoo; Byeong Yeon Moon; Jae Hoon Jung; Jin Jang; S. M. Pietruszko; Min Koo Han; Hyuk Ryeol Park

doi:10.1016/0022-3093(96)00065-8

Low temperature fabrication of APCVD a-Si thin film transistors with ion doped layer

Kyung Ha Lee
, Jae Ho Yoo
, Byeong Yeon Moon
, Jae Hoon Jung
, Jin Jang
, S. M. Pietruszko
, Min Koo Han
, Hyuk Ryeol Park

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The effect of substrate temperature on the electrical and optical properties of AP (atmospheric pressure) chemical vapor deposited (CVD) a-Si films to fabricate low substrate temperature CVD a-Si TFT was investigated. The photosensitivity and hydrogen content of APCVD a-Si film deposited at 380°C are 1.35 × 10⁵ and 3.08 at.%, respectively. This film exhibited an Urbach energy of 53 meV and defect density of 5 × 10¹⁵ cm^-3. The conductivity and conductivity activation energy for an ion doped a-Si layer with an ion dose of 2.7 × 10¹⁴ cm^-2 are 4.6 × 10^-3 S cm^-1 and 0.11 eV, respectively. The fabricated APCVD a-Si TFT using a-Si film deposited at 380°C exhibited the field effect mobility of 1 cm² V s^-1 and threshold voltage of 7.5 V.

Original language	English
Pages (from-to)	1141-1145
Number of pages	5
Journal	Journal of Non-Crystalline Solids
Volume	198-200
Issue number	PART 2
DOIs	https://doi.org/10.1016/0022-3093(96)00065-8
Publication status	Published - May 1996

Bibliographical note

Funding Information:
This work was supported by the Korea Science and Engineering Foundation through the Semiconductor Physics Research Center, and by the Basic Science Research Institute Program, Ministry of Education, project no. BSRI-'95-2443.

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@article{826ea3ecd56c4aac8bb23ff88cd1e38a,

title = "Low temperature fabrication of APCVD a-Si thin film transistors with ion doped layer",

abstract = "The effect of substrate temperature on the electrical and optical properties of AP (atmospheric pressure) chemical vapor deposited (CVD) a-Si films to fabricate low substrate temperature CVD a-Si TFT was investigated. The photosensitivity and hydrogen content of APCVD a-Si film deposited at 380°C are 1.35 × 105 and 3.08 at.\%, respectively. This film exhibited an Urbach energy of 53 meV and defect density of 5 × 1015 cm-3. The conductivity and conductivity activation energy for an ion doped a-Si layer with an ion dose of 2.7 × 1014 cm-2 are 4.6 × 10-3 S cm-1 and 0.11 eV, respectively. The fabricated APCVD a-Si TFT using a-Si film deposited at 380°C exhibited the field effect mobility of 1 cm2 V s-1 and threshold voltage of 7.5 V.",

author = "Lee, \{Kyung Ha\} and Yoo, \{Jae Ho\} and Moon, \{Byeong Yeon\} and Jung, \{Jae Hoon\} and Jin Jang and Pietruszko, \{S. M.\} and Han, \{Min Koo\} and Park, \{Hyuk Ryeol\}",

note = "Funding Information: This work was supported by the Korea Science and Engineering Foundation through the Semiconductor Physics Research Center, and by the Basic Science Research Institute Program, Ministry of Education, project no. BSRI-'95-2443.",

year = "1996",

month = may,

doi = "10.1016/0022-3093(96)00065-8",

language = "English",

volume = "198-200",

pages = "1141--1145",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "Elsevier BV",

number = "PART 2",

}

TY - JOUR

T1 - Low temperature fabrication of APCVD a-Si thin film transistors with ion doped layer

AU - Lee, Kyung Ha

AU - Yoo, Jae Ho

AU - Moon, Byeong Yeon

AU - Jung, Jae Hoon

AU - Jang, Jin

AU - Pietruszko, S. M.

AU - Han, Min Koo

AU - Park, Hyuk Ryeol

N1 - Funding Information: This work was supported by the Korea Science and Engineering Foundation through the Semiconductor Physics Research Center, and by the Basic Science Research Institute Program, Ministry of Education, project no. BSRI-'95-2443.

PY - 1996/5

Y1 - 1996/5

N2 - The effect of substrate temperature on the electrical and optical properties of AP (atmospheric pressure) chemical vapor deposited (CVD) a-Si films to fabricate low substrate temperature CVD a-Si TFT was investigated. The photosensitivity and hydrogen content of APCVD a-Si film deposited at 380°C are 1.35 × 105 and 3.08 at.%, respectively. This film exhibited an Urbach energy of 53 meV and defect density of 5 × 1015 cm-3. The conductivity and conductivity activation energy for an ion doped a-Si layer with an ion dose of 2.7 × 1014 cm-2 are 4.6 × 10-3 S cm-1 and 0.11 eV, respectively. The fabricated APCVD a-Si TFT using a-Si film deposited at 380°C exhibited the field effect mobility of 1 cm2 V s-1 and threshold voltage of 7.5 V.

AB - The effect of substrate temperature on the electrical and optical properties of AP (atmospheric pressure) chemical vapor deposited (CVD) a-Si films to fabricate low substrate temperature CVD a-Si TFT was investigated. The photosensitivity and hydrogen content of APCVD a-Si film deposited at 380°C are 1.35 × 105 and 3.08 at.%, respectively. This film exhibited an Urbach energy of 53 meV and defect density of 5 × 1015 cm-3. The conductivity and conductivity activation energy for an ion doped a-Si layer with an ion dose of 2.7 × 1014 cm-2 are 4.6 × 10-3 S cm-1 and 0.11 eV, respectively. The fabricated APCVD a-Si TFT using a-Si film deposited at 380°C exhibited the field effect mobility of 1 cm2 V s-1 and threshold voltage of 7.5 V.

UR - https://www.scopus.com/pages/publications/0030563406

U2 - 10.1016/0022-3093(96)00065-8

DO - 10.1016/0022-3093(96)00065-8

M3 - Article

AN - SCOPUS:0030563406

SN - 0022-3093

VL - 198-200

SP - 1141

EP - 1145

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - PART 2

ER -

Low temperature fabrication of APCVD a-Si thin film transistors with ion doped layer

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