Low-Temperature Process Compatibility for the Oxide Thin Film Transistors Using In-Ga-Zn-O Active Channels Prepared by Atomic-Layer Deposition at 150°C

So Jung Yoon; Seung Bo Ko; Nak Jin Seong; Kyujeong Choi; Woong Chul Shin; Sung Min Yoon

doi:10.23919/AM-FPD.2019.8830568

Low-Temperature Process Compatibility for the Oxide Thin Film Transistors Using In-Ga-Zn-O Active Channels Prepared by Atomic-Layer Deposition at 150°C

So Jung Yoon
, Seung Bo Ko
, Nak Jin Seong
, Kyujeong Choi
, Woong Chul Shin
, Sung Min Yoon

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

We investigated the effects of post-annealing process temperature on the device characteristics and stabilities of the oxide thin-film transistors (TFTs) using the In-Ga-Zn-O (IGZO) active layers prepared by atomic-layer deposition process. The fabricated IGZO TFTs exhibited a high saturation mobility of 12.0 cm²/Vs and a subthreshold swing of 0.20 V/dec after the annealing at 150 °C. The density of tail and deep states for the ALD-IGZO TFTs annealed at 150 °C was estimated to be 7.3×10¹⁷ in the mid-gap region. The threshold voltage shifts for the TFTs annealed at 150 °C were estimated to be -3.5 and -2.3 V under the positive and negative bias temperature stress tests at 60 °C for 10⁴ s, respectively.

Original language	English
Title of host publication	AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publication	TFT Technologies and FPD Materials, Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9784990875374
DOIs	https://doi.org/10.23919/AM-FPD.2019.8830568
Publication status	Published - Jul 2019
Event	26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2019 - Kyoto, Japan Duration: 2 Jul 2019 → 5 Jul 2019

Publication series

Name	AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings

Conference

Conference	26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2019
Country/Territory	Japan
City	Kyoto
Period	2/07/19 → 5/07/19

Bibliographical note

Publisher Copyright:
© 2019 FTFMD.

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10.23919/AM-FPD.2019.8830568

Cite this

Yoon, S. J., Ko, S. B., Seong, N. J., Choi, K., Shin, W. C., & Yoon, S. M. (2019). Low-Temperature Process Compatibility for the Oxide Thin Film Transistors Using In-Ga-Zn-O Active Channels Prepared by Atomic-Layer Deposition at 150°C. In AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings Article 8830568 (AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/AM-FPD.2019.8830568

Yoon, So Jung ; Ko, Seung Bo ; Seong, Nak Jin et al. / Low-Temperature Process Compatibility for the Oxide Thin Film Transistors Using In-Ga-Zn-O Active Channels Prepared by Atomic-Layer Deposition at 150°C. AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. (AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).

@inproceedings{fc1a5fe6e62f4a4a9169b502af296eb9,

title = "Low-Temperature Process Compatibility for the Oxide Thin Film Transistors Using In-Ga-Zn-O Active Channels Prepared by Atomic-Layer Deposition at 150°C",

abstract = "We investigated the effects of post-annealing process temperature on the device characteristics and stabilities of the oxide thin-film transistors (TFTs) using the In-Ga-Zn-O (IGZO) active layers prepared by atomic-layer deposition process. The fabricated IGZO TFTs exhibited a high saturation mobility of 12.0 cm2/Vs and a subthreshold swing of 0.20 V/dec after the annealing at 150 °C. The density of tail and deep states for the ALD-IGZO TFTs annealed at 150 °C was estimated to be 7.3×1017 in the mid-gap region. The threshold voltage shifts for the TFTs annealed at 150 °C were estimated to be -3.5 and -2.3 V under the positive and negative bias temperature stress tests at 60 °C for 104 s, respectively.",

author = "Yoon, \{So Jung\} and Ko, \{Seung Bo\} and Seong, \{Nak Jin\} and Kyujeong Choi and Shin, \{Woong Chul\} and Yoon, \{Sung Min\}",

note = "Publisher Copyright: {\textcopyright} 2019 FTFMD.; 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2019 ; Conference date: 02-07-2019 Through 05-07-2019",

year = "2019",

month = jul,

doi = "10.23919/AM-FPD.2019.8830568",

language = "English",

series = "AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices",

address = "United States",

}

Yoon, SJ, Ko, SB, Seong, NJ, Choi, K, Shin, WC & Yoon, SM 2019, Low-Temperature Process Compatibility for the Oxide Thin Film Transistors Using In-Ga-Zn-O Active Channels Prepared by Atomic-Layer Deposition at 150°C. in AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings., 8830568, AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings, Institute of Electrical and Electronics Engineers Inc., 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2019, Kyoto, Japan, 2/07/19. https://doi.org/10.23919/AM-FPD.2019.8830568

Low-Temperature Process Compatibility for the Oxide Thin Film Transistors Using In-Ga-Zn-O Active Channels Prepared by Atomic-Layer Deposition at 150°C. / Yoon, So Jung; Ko, Seung Bo; Seong, Nak Jin et al.
AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. 8830568 (AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Low-Temperature Process Compatibility for the Oxide Thin Film Transistors Using In-Ga-Zn-O Active Channels Prepared by Atomic-Layer Deposition at 150°C

AU - Yoon, So Jung

AU - Ko, Seung Bo

AU - Seong, Nak Jin

AU - Choi, Kyujeong

AU - Shin, Woong Chul

AU - Yoon, Sung Min

PY - 2019/7

Y1 - 2019/7

N2 - We investigated the effects of post-annealing process temperature on the device characteristics and stabilities of the oxide thin-film transistors (TFTs) using the In-Ga-Zn-O (IGZO) active layers prepared by atomic-layer deposition process. The fabricated IGZO TFTs exhibited a high saturation mobility of 12.0 cm2/Vs and a subthreshold swing of 0.20 V/dec after the annealing at 150 °C. The density of tail and deep states for the ALD-IGZO TFTs annealed at 150 °C was estimated to be 7.3×1017 in the mid-gap region. The threshold voltage shifts for the TFTs annealed at 150 °C were estimated to be -3.5 and -2.3 V under the positive and negative bias temperature stress tests at 60 °C for 104 s, respectively.

AB - We investigated the effects of post-annealing process temperature on the device characteristics and stabilities of the oxide thin-film transistors (TFTs) using the In-Ga-Zn-O (IGZO) active layers prepared by atomic-layer deposition process. The fabricated IGZO TFTs exhibited a high saturation mobility of 12.0 cm2/Vs and a subthreshold swing of 0.20 V/dec after the annealing at 150 °C. The density of tail and deep states for the ALD-IGZO TFTs annealed at 150 °C was estimated to be 7.3×1017 in the mid-gap region. The threshold voltage shifts for the TFTs annealed at 150 °C were estimated to be -3.5 and -2.3 V under the positive and negative bias temperature stress tests at 60 °C for 104 s, respectively.

UR - https://www.scopus.com/pages/publications/85073205700

U2 - 10.23919/AM-FPD.2019.8830568

DO - 10.23919/AM-FPD.2019.8830568

M3 - Conference contribution

AN - SCOPUS:85073205700

T3 - AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings

BT - AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2019

Y2 - 2 July 2019 through 5 July 2019

ER -

Yoon SJ, Ko SB, Seong NJ, Choi K, Shin WC, Yoon SM. Low-Temperature Process Compatibility for the Oxide Thin Film Transistors Using In-Ga-Zn-O Active Channels Prepared by Atomic-Layer Deposition at 150°C. In AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. 8830568. (AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings). doi: 10.23919/AM-FPD.2019.8830568

Low-Temperature Process Compatibility for the Oxide Thin Film Transistors Using In-Ga-Zn-O Active Channels Prepared by Atomic-Layer Deposition at 150°C

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