Low-Temperature Process Compatibility for the Oxide Thin Film Transistors Using In-Ga-Zn-O Active Channels Prepared by Atomic-Layer Deposition at 150°C
- So Jung Yoon
- , Seung Bo Ko
- , Nak Jin Seong
- , Kyujeong Choi
- , Woong Chul Shin
- , Sung Min Yoon
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
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(Scopus)