Low-temperature processed flexible In-Ga-Zn-O thin-film transistors exhibiting high electrical performance

Shinhyuk Yang; Jun Yong Bak; Sung Min Yoon; Min Ki Ryu; Himchan Oh; Chi Sun Hwang; Gi Heon Kim; Sang Hee Ko Park; Jin Jang

doi:10.1109/LED.2011.2167122

Low-temperature processed flexible In-Ga-Zn-O thin-film transistors exhibiting high electrical performance

Shinhyuk Yang
, Jun Yong Bak
, Sung Min Yoon
, Min Ki Ryu
, Himchan Oh
, Chi Sun Hwang
, Gi Heon Kim
, Sang Hee Ko Park
, Jin Jang

Research output: Contribution to journal › Article › peer-review

60 Citations (Scopus)

Abstract

In-Ga-Zn-O thin-film transistors processed at 150 { \circ}C} on laminated polyethylene naphthalate substrates exhibiting high electrical performances such as a saturation mobility of 24.26 cm/(V s}), a subthreshold slope of 140 mV/dec, a turn-on voltage V_{\rm on} of -0.41 V, and an on-off ratio of 1.8 \times 10}⁹ were fabricated. Cool-off-type adhesive was adopted to easily detach the plastic substrate from the carrier holder. Devices also showed highly uniform characteristics with a variation of 0.09 V in turn-on voltage. Stability characteristics under the positive gate bias stress can be enhanced by increasing the annealing time at 150°C.

Original language	English
Article number	6059477
Pages (from-to)	1692-1694
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	12
DOIs	https://doi.org/10.1109/LED.2011.2167122
Publication status	Published - Dec 2011

Bibliographical note

Funding Information:
Manuscript received July 14, 2011; revised August 16, 2011; accepted August 27, 2011. Date of publication October 24, 2011; date of current version November 23, 2011. This work was supported by the Industrial Strategic Technology Development Program of the Ministry of Knowledge Economy/Korea Evaluation Institute of Industrial Technology (MKE/KEIT) under Project 10035225, Development of Core Technology for High-Performance AMOLED on plastic. The review of this letter was arranged by Editor A. Flewitt.

Keywords

Oxide
Sputtering
Thin-film transistor (TFT)
Transparent

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10.1109/LED.2011.2167122

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title = "Low-temperature processed flexible In-Ga-Zn-O thin-film transistors exhibiting high electrical performance",

abstract = "In-Ga-Zn-O thin-film transistors processed at 150 \{ \textbackslash{}circ\}C\} on laminated polyethylene naphthalate substrates exhibiting high electrical performances such as a saturation mobility of 24.26 cm/(V s\}), a subthreshold slope of 140 mV/dec, a turn-on voltage V\textbackslash{}rm on of -0.41 V, and an on-off ratio of 1.8 \textbackslash{}times 10\}9 were fabricated. Cool-off-type adhesive was adopted to easily detach the plastic substrate from the carrier holder. Devices also showed highly uniform characteristics with a variation of 0.09 V in turn-on voltage. Stability characteristics under the positive gate bias stress can be enhanced by increasing the annealing time at 150°C.",

keywords = "Oxide, Sputtering, Thin-film transistor (TFT), Transparent",

author = "Shinhyuk Yang and Bak, \{Jun Yong\} and Yoon, \{Sung Min\} and Ryu, \{Min Ki\} and Himchan Oh and Hwang, \{Chi Sun\} and Kim, \{Gi Heon\} and Park, \{Sang Hee Ko\} and Jin Jang",

note = "Funding Information: Manuscript received July 14, 2011; revised August 16, 2011; accepted August 27, 2011. Date of publication October 24, 2011; date of current version November 23, 2011. This work was supported by the Industrial Strategic Technology Development Program of the Ministry of Knowledge Economy/Korea Evaluation Institute of Industrial Technology (MKE/KEIT) under Project 10035225, Development of Core Technology for High-Performance AMOLED on plastic. The review of this letter was arranged by Editor A. Flewitt.",

year = "2011",

month = dec,

doi = "10.1109/LED.2011.2167122",

language = "English",

volume = "32",

pages = "1692--1694",

journal = "IEEE Electron Device Letters",

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AU - Yang, Shinhyuk

AU - Bak, Jun Yong

AU - Yoon, Sung Min

AU - Ryu, Min Ki

AU - Oh, Himchan

AU - Hwang, Chi Sun

AU - Kim, Gi Heon

AU - Park, Sang Hee Ko

AU - Jang, Jin

N1 - Funding Information: Manuscript received July 14, 2011; revised August 16, 2011; accepted August 27, 2011. Date of publication October 24, 2011; date of current version November 23, 2011. This work was supported by the Industrial Strategic Technology Development Program of the Ministry of Knowledge Economy/Korea Evaluation Institute of Industrial Technology (MKE/KEIT) under Project 10035225, Development of Core Technology for High-Performance AMOLED on plastic. The review of this letter was arranged by Editor A. Flewitt.

PY - 2011/12

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AB - In-Ga-Zn-O thin-film transistors processed at 150 { \circ}C} on laminated polyethylene naphthalate substrates exhibiting high electrical performances such as a saturation mobility of 24.26 cm/(V s}), a subthreshold slope of 140 mV/dec, a turn-on voltage V\rm on of -0.41 V, and an on-off ratio of 1.8 \times 10}9 were fabricated. Cool-off-type adhesive was adopted to easily detach the plastic substrate from the carrier holder. Devices also showed highly uniform characteristics with a variation of 0.09 V in turn-on voltage. Stability characteristics under the positive gate bias stress can be enhanced by increasing the annealing time at 150°C.

KW - Oxide

KW - Sputtering

KW - Thin-film transistor (TFT)

KW - Transparent

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JF - IEEE Electron Device Letters

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ER -

Low-temperature processed flexible In-Ga-Zn-O thin-film transistors exhibiting high electrical performance

Abstract

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Keywords

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