Low-voltage driven carbon nanotube field emission lamp

Na Young Bae; Woo Mi Bae; An Na Ha; Masayuki Nakamoto; Jin Jang; Kyu Chang Park

doi:10.1016/j.cap.2011.07.014

Low-voltage driven carbon nanotube field emission lamp

Na Young Bae
, Woo Mi Bae
, An Na Ha
, Masayuki Nakamoto
, Jin Jang
, Kyu Chang Park

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

CNTs were grown on a silicon substrate using the RAP process and PECVD system. The resulting CNT emitters showed the excellent field emission characteristics. For low-voltage driving field emitter fabrication, the CNTs were connected to the drain part of an external MOSFET. A low gate voltage of the MOSFET can control the field emission current of CNTs, instead of a high anode voltage. The emission current of CNTs controlled by the MOSFET was very stable in terms of both the current switching and the current stability of 100 h.

Original language	English
Pages (from-to)	S86-S89
Journal	Current Applied Physics
Volume	11
Issue number	4 SUPPL.
DOIs	https://doi.org/10.1016/j.cap.2011.07.014
Publication status	Published - Jul 2011

Bibliographical note

Funding Information:
This work was supported by the Seoul Research and Business Development program (Grant No. CR070054 ) and by the Industrial Core Technology Development Program funded by the Ministry of Knowledge and Economics (No. 10037379 ).

Keywords

Backlight
Carbon nanotube
Field emission
MOSFET

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10.1016/j.cap.2011.07.014

Cite this

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title = "Low-voltage driven carbon nanotube field emission lamp",

abstract = "CNTs were grown on a silicon substrate using the RAP process and PECVD system. The resulting CNT emitters showed the excellent field emission characteristics. For low-voltage driving field emitter fabrication, the CNTs were connected to the drain part of an external MOSFET. A low gate voltage of the MOSFET can control the field emission current of CNTs, instead of a high anode voltage. The emission current of CNTs controlled by the MOSFET was very stable in terms of both the current switching and the current stability of 100 h.",

keywords = "Backlight, Carbon nanotube, Field emission, MOSFET",

author = "Bae, \{Na Young\} and Bae, \{Woo Mi\} and Ha, \{An Na\} and Masayuki Nakamoto and Jin Jang and Park, \{Kyu Chang\}",

note = "Funding Information: This work was supported by the Seoul Research and Business Development program (Grant No. CR070054 ) and by the Industrial Core Technology Development Program funded by the Ministry of Knowledge and Economics (No. 10037379 ).",

year = "2011",

month = jul,

doi = "10.1016/j.cap.2011.07.014",

language = "English",

volume = "11",

pages = "S86--S89",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier B.V.",

number = "4 SUPPL.",

}

TY - JOUR

T1 - Low-voltage driven carbon nanotube field emission lamp

AU - Bae, Na Young

AU - Bae, Woo Mi

AU - Ha, An Na

AU - Nakamoto, Masayuki

AU - Jang, Jin

AU - Park, Kyu Chang

N1 - Funding Information: This work was supported by the Seoul Research and Business Development program (Grant No. CR070054 ) and by the Industrial Core Technology Development Program funded by the Ministry of Knowledge and Economics (No. 10037379 ).

PY - 2011/7

Y1 - 2011/7

N2 - CNTs were grown on a silicon substrate using the RAP process and PECVD system. The resulting CNT emitters showed the excellent field emission characteristics. For low-voltage driving field emitter fabrication, the CNTs were connected to the drain part of an external MOSFET. A low gate voltage of the MOSFET can control the field emission current of CNTs, instead of a high anode voltage. The emission current of CNTs controlled by the MOSFET was very stable in terms of both the current switching and the current stability of 100 h.

AB - CNTs were grown on a silicon substrate using the RAP process and PECVD system. The resulting CNT emitters showed the excellent field emission characteristics. For low-voltage driving field emitter fabrication, the CNTs were connected to the drain part of an external MOSFET. A low gate voltage of the MOSFET can control the field emission current of CNTs, instead of a high anode voltage. The emission current of CNTs controlled by the MOSFET was very stable in terms of both the current switching and the current stability of 100 h.

KW - Backlight

KW - Carbon nanotube

KW - Field emission

KW - MOSFET

UR - https://www.scopus.com/pages/publications/80455155082

U2 - 10.1016/j.cap.2011.07.014

DO - 10.1016/j.cap.2011.07.014

M3 - Article

AN - SCOPUS:80455155082

SN - 1567-1739

VL - 11

SP - S86-S89

JO - Current Applied Physics

JF - Current Applied Physics

IS - 4 SUPPL.

ER -

Low-voltage driven carbon nanotube field emission lamp

Abstract

Bibliographical note

Keywords

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