Low voltage operation of nonvolatile ferroelectric capacitors using poly(vinylidene fluoride-trifluoroethylene) copolymer and thin Al2 O3 insulating layer

Soon Won Jung; Sung Min Yoon; Seung Youl Kang; Kyu Jeong Choi; Woong Chul Shin; Byoung Gon Yu

doi:10.1149/1.3154417

Low voltage operation of nonvolatile ferroelectric capacitors using poly(vinylidene fluoride-trifluoroethylene) copolymer and thin Al₂ O₃ insulating layer

Soon Won Jung
, Sung Min Yoon
, Seung Youl Kang
, Kyu Jeong Choi
, Woong Chul Shin
, Byoung Gon Yu

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

We have successfully demonstrated low voltage operation of metal-ferroelectric-insulator-semiconductor (MFIS) capacitors with poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)]/ Al₂ O ₃ /p_-Si (100) structures. P(VDF-TrFE) copolymer thin films (thickness of 20 nm) prepared by the spin-coating method and annealed at 140°C showed good ferroelectric behavior with a remnant polarization of 1 μC/ cm₂ at a voltage sweep of ±4 V. Remarkable reduction in leakage current was realized by introducing a 5 nm thick Al₂ O ₃ layer grown by atomic layer deposition. In capacitance-voltage measurements, MFIS capacitors showed rectangular-shaped hysteresis curves, attributed to the ferroelectric material, in which the memory window width was 1.5 V, even at applied voltages of ±3 V.

Original language	English
Pages (from-to)	H325-H328
Journal	Electrochemical and Solid-State Letters
Volume	12
Issue number	9
DOIs	https://doi.org/10.1149/1.3154417
Publication status	Published - 2009

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title = "Low voltage operation of nonvolatile ferroelectric capacitors using poly(vinylidene fluoride-trifluoroethylene) copolymer and thin Al2 O3 insulating layer",

abstract = "We have successfully demonstrated low voltage operation of metal-ferroelectric-insulator-semiconductor (MFIS) capacitors with poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)]/ Al2 O 3 /p-Si (100) structures. P(VDF-TrFE) copolymer thin films (thickness of 20 nm) prepared by the spin-coating method and annealed at 140°C showed good ferroelectric behavior with a remnant polarization of 1 μC/ cm2 at a voltage sweep of ±4 V. Remarkable reduction in leakage current was realized by introducing a 5 nm thick Al2 O 3 layer grown by atomic layer deposition. In capacitance-voltage measurements, MFIS capacitors showed rectangular-shaped hysteresis curves, attributed to the ferroelectric material, in which the memory window width was 1.5 V, even at applied voltages of ±3 V.",

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year = "2009",

doi = "10.1149/1.3154417",

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T1 - Low voltage operation of nonvolatile ferroelectric capacitors using poly(vinylidene fluoride-trifluoroethylene) copolymer and thin Al2 O3 insulating layer

AU - Jung, Soon Won

AU - Yoon, Sung Min

AU - Kang, Seung Youl

AU - Choi, Kyu Jeong

AU - Shin, Woong Chul

AU - Yu, Byoung Gon

PY - 2009

Y1 - 2009

N2 - We have successfully demonstrated low voltage operation of metal-ferroelectric-insulator-semiconductor (MFIS) capacitors with poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)]/ Al2 O 3 /p-Si (100) structures. P(VDF-TrFE) copolymer thin films (thickness of 20 nm) prepared by the spin-coating method and annealed at 140°C showed good ferroelectric behavior with a remnant polarization of 1 μC/ cm2 at a voltage sweep of ±4 V. Remarkable reduction in leakage current was realized by introducing a 5 nm thick Al2 O 3 layer grown by atomic layer deposition. In capacitance-voltage measurements, MFIS capacitors showed rectangular-shaped hysteresis curves, attributed to the ferroelectric material, in which the memory window width was 1.5 V, even at applied voltages of ±3 V.

AB - We have successfully demonstrated low voltage operation of metal-ferroelectric-insulator-semiconductor (MFIS) capacitors with poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)]/ Al2 O 3 /p-Si (100) structures. P(VDF-TrFE) copolymer thin films (thickness of 20 nm) prepared by the spin-coating method and annealed at 140°C showed good ferroelectric behavior with a remnant polarization of 1 μC/ cm2 at a voltage sweep of ±4 V. Remarkable reduction in leakage current was realized by introducing a 5 nm thick Al2 O 3 layer grown by atomic layer deposition. In capacitance-voltage measurements, MFIS capacitors showed rectangular-shaped hysteresis curves, attributed to the ferroelectric material, in which the memory window width was 1.5 V, even at applied voltages of ±3 V.

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DO - 10.1149/1.3154417

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SN - 1099-0062

VL - 12

SP - H325-H328

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 9

ER -

Low voltage operation of nonvolatile ferroelectric capacitors using poly(vinylidene fluoride-trifluoroethylene) copolymer and thin Al₂ O₃ insulating layer

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