Low voltage top-emitting organic light emitting devices by using 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile

Sang Hee Cho; Sang Woo Pyo; Min Chul Suh

doi:10.1016/j.synthmet.2011.12.028

Low voltage top-emitting organic light emitting devices by using 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile

Sang Hee Cho, Sang Woo Pyo, Min Chul Suh

Research output: Contribution to journal › Article › peer-review

42 Citations (Scopus)

Abstract

Two different types of hole transport layers are applied to the standard top-emitting green organic light emitting diodes (OLEDs) with relatively thick microcavity structure for a low voltage operation. An 1,4,5,8,9,11- hexaazatriphenylene-hexacarbonitrile (HAT-CN), a well-known electron accepting material, was utilized as an interlayer which induces an interfacial charge transfer. The position of an interlayer was determined by investigation of device characteristics of four different types of hole only devices. The optimized device with very thin HAT-CN layer (∼5 nm) sandwiched between N,N′-diphenyl-N,N′-bis-[4-(phenyl-m-tolylamino)-phenyl]-biphenyl-4, 4′-diamine (DNTPD) layers showed very stable current efficiency and power efficiency behavior with low roll-off characteristic. The performances of the device with interlayer were compared to those of p-doped device (3%). Very interestingly, the device with HAT-CN interlayer showed very similar operating voltage behavior as well as current/power efficiency behavior compared to that prepared with p-doped hole transport layer (HTL).

Original language	English
Pages (from-to)	402-405
Number of pages	4
Journal	Synthetic Metals
Volume	162
Issue number	3-4
DOIs	https://doi.org/10.1016/j.synthmet.2011.12.028
Publication status	Published - Mar 2012

Bibliographical note

Funding Information:
This work was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant No. NRF-2011-0006847 ). This research was also supported by Samsung Mobile Display–KHU OLED Research Center (Grant No. 20111029 ).

Keywords

Charge transfer
Low-voltage
Microcavity structure
Thick hole transport layer
Top-emitting, Interlayer

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10.1016/j.synthmet.2011.12.028

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title = "Low voltage top-emitting organic light emitting devices by using 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile",

abstract = "Two different types of hole transport layers are applied to the standard top-emitting green organic light emitting diodes (OLEDs) with relatively thick microcavity structure for a low voltage operation. An 1,4,5,8,9,11- hexaazatriphenylene-hexacarbonitrile (HAT-CN), a well-known electron accepting material, was utilized as an interlayer which induces an interfacial charge transfer. The position of an interlayer was determined by investigation of device characteristics of four different types of hole only devices. The optimized device with very thin HAT-CN layer (∼5 nm) sandwiched between N,N′-diphenyl-N,N′-bis-[4-(phenyl-m-tolylamino)-phenyl]-biphenyl-4, 4′-diamine (DNTPD) layers showed very stable current efficiency and power efficiency behavior with low roll-off characteristic. The performances of the device with interlayer were compared to those of p-doped device (3%). Very interestingly, the device with HAT-CN interlayer showed very similar operating voltage behavior as well as current/power efficiency behavior compared to that prepared with p-doped hole transport layer (HTL).",

keywords = "Charge transfer, Low-voltage, Microcavity structure, Thick hole transport layer, Top-emitting, Interlayer",

author = "Cho, {Sang Hee} and Pyo, {Sang Woo} and Suh, {Min Chul}",

note = "Funding Information: This work was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant No. NRF-2011-0006847 ). This research was also supported by Samsung Mobile Display–KHU OLED Research Center (Grant No. 20111029 ).",

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doi = "10.1016/j.synthmet.2011.12.028",

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AU - Cho, Sang Hee

AU - Pyo, Sang Woo

AU - Suh, Min Chul

N1 - Funding Information: This work was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant No. NRF-2011-0006847 ). This research was also supported by Samsung Mobile Display–KHU OLED Research Center (Grant No. 20111029 ).

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N2 - Two different types of hole transport layers are applied to the standard top-emitting green organic light emitting diodes (OLEDs) with relatively thick microcavity structure for a low voltage operation. An 1,4,5,8,9,11- hexaazatriphenylene-hexacarbonitrile (HAT-CN), a well-known electron accepting material, was utilized as an interlayer which induces an interfacial charge transfer. The position of an interlayer was determined by investigation of device characteristics of four different types of hole only devices. The optimized device with very thin HAT-CN layer (∼5 nm) sandwiched between N,N′-diphenyl-N,N′-bis-[4-(phenyl-m-tolylamino)-phenyl]-biphenyl-4, 4′-diamine (DNTPD) layers showed very stable current efficiency and power efficiency behavior with low roll-off characteristic. The performances of the device with interlayer were compared to those of p-doped device (3%). Very interestingly, the device with HAT-CN interlayer showed very similar operating voltage behavior as well as current/power efficiency behavior compared to that prepared with p-doped hole transport layer (HTL).

AB - Two different types of hole transport layers are applied to the standard top-emitting green organic light emitting diodes (OLEDs) with relatively thick microcavity structure for a low voltage operation. An 1,4,5,8,9,11- hexaazatriphenylene-hexacarbonitrile (HAT-CN), a well-known electron accepting material, was utilized as an interlayer which induces an interfacial charge transfer. The position of an interlayer was determined by investigation of device characteristics of four different types of hole only devices. The optimized device with very thin HAT-CN layer (∼5 nm) sandwiched between N,N′-diphenyl-N,N′-bis-[4-(phenyl-m-tolylamino)-phenyl]-biphenyl-4, 4′-diamine (DNTPD) layers showed very stable current efficiency and power efficiency behavior with low roll-off characteristic. The performances of the device with interlayer were compared to those of p-doped device (3%). Very interestingly, the device with HAT-CN interlayer showed very similar operating voltage behavior as well as current/power efficiency behavior compared to that prepared with p-doped hole transport layer (HTL).

KW - Charge transfer

KW - Low-voltage

KW - Microcavity structure

KW - Thick hole transport layer

KW - Top-emitting, Interlayer

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Low voltage top-emitting organic light emitting devices by using 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile

Abstract

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Keywords

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