Luminescence properties of Si nanocrystals fabricated by ion beam sputtering and annealing

Sung Kim; Dong Hee Shin; Dong Yeol Shin; Chang Oh Kim; Jae Hee Park; Seung Bum Yang; Suk Ho Choi; Seung Jo Yoo; Jin Gyu Kim

doi:10.1155/2012/572746

Luminescence properties of Si nanocrystals fabricated by ion beam sputtering and annealing

Sung Kim, Dong Hee Shin, Dong Yeol Shin, Chang Oh Kim, Jae Hee Park, Seung Bum Yang, Suk Ho Choi, Seung Jo Yoo, Jin Gyu Kim

Research output: Contribution to journal › Review article › peer-review

9 Citations (Scopus)

Abstract

During the past several decades, Si nanocrystals (NCs) have received remarkable attention in view of potential optoelectronic device applications. This paper summarizes recent progress in the study of luminescence from Si NCs, such as photoluminescence (PL), cathodoluminescence, time-solved PL, and electroluminescence. The paper is especially focused on Si NCs produced by ion beam sputtering deposition of SiO x single layer or SiO _x /SiO ₂ multilayers and subsequent annealing. The effects of stoichiometry (x) and thickness of Si O _x layers on the luminescence are analyzed in detail and discussed based on possible mechanisms.

Original language	English
Article number	572746
Journal	Journal of Nanomaterials
Volume	2012
DOIs	https://doi.org/10.1155/2012/572746
Publication status	Published - 2012

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@article{9b4835bf5e4343f3a6dc1d00fd0dd026,

title = "Luminescence properties of Si nanocrystals fabricated by ion beam sputtering and annealing",

abstract = "During the past several decades, Si nanocrystals (NCs) have received remarkable attention in view of potential optoelectronic device applications. This paper summarizes recent progress in the study of luminescence from Si NCs, such as photoluminescence (PL), cathodoluminescence, time-solved PL, and electroluminescence. The paper is especially focused on Si NCs produced by ion beam sputtering deposition of SiO x single layer or SiO x /SiO 2 multilayers and subsequent annealing. The effects of stoichiometry (x) and thickness of Si O x layers on the luminescence are analyzed in detail and discussed based on possible mechanisms.",

author = "Sung Kim and Shin, {Dong Hee} and Shin, {Dong Yeol} and Kim, {Chang Oh} and Park, {Jae Hee} and Yang, {Seung Bum} and Choi, {Suk Ho} and Yoo, {Seung Jo} and Kim, {Jin Gyu}",

year = "2012",

doi = "10.1155/2012/572746",

language = "English",

volume = "2012",

journal = "Journal of Nanomaterials",

issn = "1687-4110",

publisher = "John Wiley and Sons Ltd",

}

TY - JOUR

T1 - Luminescence properties of Si nanocrystals fabricated by ion beam sputtering and annealing

AU - Kim, Sung

AU - Shin, Dong Hee

AU - Shin, Dong Yeol

AU - Kim, Chang Oh

AU - Park, Jae Hee

AU - Yang, Seung Bum

AU - Choi, Suk Ho

AU - Yoo, Seung Jo

AU - Kim, Jin Gyu

PY - 2012

Y1 - 2012

N2 - During the past several decades, Si nanocrystals (NCs) have received remarkable attention in view of potential optoelectronic device applications. This paper summarizes recent progress in the study of luminescence from Si NCs, such as photoluminescence (PL), cathodoluminescence, time-solved PL, and electroluminescence. The paper is especially focused on Si NCs produced by ion beam sputtering deposition of SiO x single layer or SiO x /SiO 2 multilayers and subsequent annealing. The effects of stoichiometry (x) and thickness of Si O x layers on the luminescence are analyzed in detail and discussed based on possible mechanisms.

AB - During the past several decades, Si nanocrystals (NCs) have received remarkable attention in view of potential optoelectronic device applications. This paper summarizes recent progress in the study of luminescence from Si NCs, such as photoluminescence (PL), cathodoluminescence, time-solved PL, and electroluminescence. The paper is especially focused on Si NCs produced by ion beam sputtering deposition of SiO x single layer or SiO x /SiO 2 multilayers and subsequent annealing. The effects of stoichiometry (x) and thickness of Si O x layers on the luminescence are analyzed in detail and discussed based on possible mechanisms.

UR - http://www.scopus.com/inward/record.url?scp=84859763964&partnerID=8YFLogxK

U2 - 10.1155/2012/572746

DO - 10.1155/2012/572746

M3 - Review article

AN - SCOPUS:84859763964

SN - 1687-4110

VL - 2012

JO - Journal of Nanomaterials

JF - Journal of Nanomaterials

M1 - 572746

ER -

Luminescence properties of Si nanocrystals fabricated by ion beam sputtering and annealing

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