Magnetotransport, optical, and electronic subband properties in Al xGa1-xN/AlN/GaN heterostructures

T. W. Kim; D. C. Choo; Y. R. Jang; K. H. Yoo; M. H. Jung; Y. H. Cho; Jae Hoon Lee; Jung Hee Lee

doi:10.1016/j.ssc.2004.06.039

Magnetotransport, optical, and electronic subband properties in Al _xGa_1-xN/AlN/GaN heterostructures

T. W. Kim
, D. C. Choo
, Y. R. Jang
, K. H. Yoo
, M. H. Jung
, Y. H. Cho
, Jae Hoon Lee
, Jung Hee Lee

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The Shubnikov-de Haas (S-dH) results at 1.5 K for Al_xGa _1-xN/AlN/GaN heterostructures and the fast Fourier transformation data for the S-dH data indicated the occupation by a two-dimensional election gas (2DEG) of one subband in the GaN active layer. Photoluminescence (PL) spectra showed a broad PL emission about 30 meV below the GaN exciton emission peak at 3.474 eV that could be attributed to recombination between the 2DEG occupying in the AlN/GaN heterointerface and photoexcited holes. A possible subband structure was calculated by a self-consistent method taking into account the spontaneous and piezoelectric polarizations, and one subband was occupied by 2DEG below the Fermi level, which was in reasonable agreement with the S-dH results. These results can help improve understanding of magnetotransport, optical, and electronic subband properties in Al _xGa_1-xAs/AlN/GaN heterostructures.

Original language	English
Pages (from-to)	67-70
Number of pages	4
Journal	Solid State Communications
Volume	132
Issue number	1
DOIs	https://doi.org/10.1016/j.ssc.2004.06.039
Publication status	Published - Oct 2004

Bibliographical note

Funding Information:
This work was supported by Korea Research Foundation Grant (KRF-2003-015-C00194).

Keywords

A. Heterostructure
D. Electronic transport

Access to Document

10.1016/j.ssc.2004.06.039

Cite this

@article{6ab97f4af380469190b40d68238bd456,

title = "Magnetotransport, optical, and electronic subband properties in Al xGa1-xN/AlN/GaN heterostructures",

abstract = "The Shubnikov-de Haas (S-dH) results at 1.5 K for AlxGa 1-xN/AlN/GaN heterostructures and the fast Fourier transformation data for the S-dH data indicated the occupation by a two-dimensional election gas (2DEG) of one subband in the GaN active layer. Photoluminescence (PL) spectra showed a broad PL emission about 30 meV below the GaN exciton emission peak at 3.474 eV that could be attributed to recombination between the 2DEG occupying in the AlN/GaN heterointerface and photoexcited holes. A possible subband structure was calculated by a self-consistent method taking into account the spontaneous and piezoelectric polarizations, and one subband was occupied by 2DEG below the Fermi level, which was in reasonable agreement with the S-dH results. These results can help improve understanding of magnetotransport, optical, and electronic subband properties in Al xGa1-xAs/AlN/GaN heterostructures.",

keywords = "A. Heterostructure, D. Electronic transport",

author = "Kim, \{T. W.\} and Choo, \{D. C.\} and Jang, \{Y. R.\} and Yoo, \{K. H.\} and Jung, \{M. H.\} and Cho, \{Y. H.\} and Lee, \{Jae Hoon\} and Lee, \{Jung Hee\}",

note = "Funding Information: This work was supported by Korea Research Foundation Grant (KRF-2003-015-C00194).",

year = "2004",

month = oct,

doi = "10.1016/j.ssc.2004.06.039",

language = "English",

volume = "132",

pages = "67--70",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd.",

number = "1",

}

TY - JOUR

T1 - Magnetotransport, optical, and electronic subband properties in Al xGa1-xN/AlN/GaN heterostructures

AU - Kim, T. W.

AU - Choo, D. C.

AU - Jang, Y. R.

AU - Yoo, K. H.

AU - Jung, M. H.

AU - Cho, Y. H.

AU - Lee, Jae Hoon

AU - Lee, Jung Hee

N1 - Funding Information: This work was supported by Korea Research Foundation Grant (KRF-2003-015-C00194).

PY - 2004/10

Y1 - 2004/10

N2 - The Shubnikov-de Haas (S-dH) results at 1.5 K for AlxGa 1-xN/AlN/GaN heterostructures and the fast Fourier transformation data for the S-dH data indicated the occupation by a two-dimensional election gas (2DEG) of one subband in the GaN active layer. Photoluminescence (PL) spectra showed a broad PL emission about 30 meV below the GaN exciton emission peak at 3.474 eV that could be attributed to recombination between the 2DEG occupying in the AlN/GaN heterointerface and photoexcited holes. A possible subband structure was calculated by a self-consistent method taking into account the spontaneous and piezoelectric polarizations, and one subband was occupied by 2DEG below the Fermi level, which was in reasonable agreement with the S-dH results. These results can help improve understanding of magnetotransport, optical, and electronic subband properties in Al xGa1-xAs/AlN/GaN heterostructures.

AB - The Shubnikov-de Haas (S-dH) results at 1.5 K for AlxGa 1-xN/AlN/GaN heterostructures and the fast Fourier transformation data for the S-dH data indicated the occupation by a two-dimensional election gas (2DEG) of one subband in the GaN active layer. Photoluminescence (PL) spectra showed a broad PL emission about 30 meV below the GaN exciton emission peak at 3.474 eV that could be attributed to recombination between the 2DEG occupying in the AlN/GaN heterointerface and photoexcited holes. A possible subband structure was calculated by a self-consistent method taking into account the spontaneous and piezoelectric polarizations, and one subband was occupied by 2DEG below the Fermi level, which was in reasonable agreement with the S-dH results. These results can help improve understanding of magnetotransport, optical, and electronic subband properties in Al xGa1-xAs/AlN/GaN heterostructures.

KW - A. Heterostructure

KW - D. Electronic transport

UR - https://www.scopus.com/pages/publications/4243078370

U2 - 10.1016/j.ssc.2004.06.039

DO - 10.1016/j.ssc.2004.06.039

M3 - Article

AN - SCOPUS:4243078370

SN - 0038-1098

VL - 132

SP - 67

EP - 70

JO - Solid State Communications

JF - Solid State Communications

IS - 1

ER -