Manipulating the interlayer exchange coupling in CoFeB/Ta/CoFeB multilayered spin valve for magnonic applications

Magnetic multilayered spin valve is the fundamental element for constructing high frequency spintronics devices such as magnetic random-access memory (MRAM). We prepared CoFeB/Ta/CoFeB sandwich spin valve with different interlayer thickness of Tantalum (Ta) on Si substrates using the RF magnetron sputtering technique and investigated the effect of Ta on the static and dynamic magnetic properties of such spin valve. Regardless of the different thickness of Ta (0–3 nm), a PSSW mode is excited in all samples. The demonstrated result indicates the potential application of spin valve structure in magnonic devices. Furthermore, the dependence of various parameters such as saturation magnetization M_s, effective magnetization M_eff, interlayer exchange coupling strength (exchange constant) and Gilbert damping α on the thickness of Ta interlayer was also investigated.