Mechanical stability of poly-Si TFT on metal foil

Jun Hyuk Cheon; Jung Ho Bae; Jin Jang

doi:10.1016/j.sse.2007.10.019

Mechanical stability of poly-Si TFT on metal foil

Jun Hyuk Cheon
, Jung Ho Bae
, Jin Jang

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

We have studied the mechanical stability of poly-Si thin-film transistor on 50 μm-thick flexible metal foil with a field-effect mobility of 81.2 cm²/V s, a threshold voltage of -2.4 V, and an on/off current ratio of 10⁶. We have measured the electrical properties under various compressive and tensile strains by changing the bending radius of the base metal foil. We have found that the TFT is stable until the bending radius of 50 mm which corresponds to the strain of ∼1.4%.

Original language	English
Pages (from-to)	473-477
Number of pages	5
Journal	Solid-State Electronics
Volume	52
Issue number	3
DOIs	https://doi.org/10.1016/j.sse.2007.10.019
Publication status	Published - Mar 2008

Keywords

Mechanical stability
Metal foil
Metal-induced crystallization with a nitride cap layer (MICC)
Poly-Si thin-film transistor (TFT)

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10.1016/j.sse.2007.10.019

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title = "Mechanical stability of poly-Si TFT on metal foil",

abstract = "We have studied the mechanical stability of poly-Si thin-film transistor on 50 μm-thick flexible metal foil with a field-effect mobility of 81.2 cm2/V s, a threshold voltage of -2.4 V, and an on/off current ratio of 106. We have measured the electrical properties under various compressive and tensile strains by changing the bending radius of the base metal foil. We have found that the TFT is stable until the bending radius of 50 mm which corresponds to the strain of ∼1.4\%.",

keywords = "Mechanical stability, Metal foil, Metal-induced crystallization with a nitride cap layer (MICC), Poly-Si thin-film transistor (TFT)",

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T1 - Mechanical stability of poly-Si TFT on metal foil

AU - Cheon, Jun Hyuk

AU - Bae, Jung Ho

AU - Jang, Jin

PY - 2008/3

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N2 - We have studied the mechanical stability of poly-Si thin-film transistor on 50 μm-thick flexible metal foil with a field-effect mobility of 81.2 cm2/V s, a threshold voltage of -2.4 V, and an on/off current ratio of 106. We have measured the electrical properties under various compressive and tensile strains by changing the bending radius of the base metal foil. We have found that the TFT is stable until the bending radius of 50 mm which corresponds to the strain of ∼1.4%.

AB - We have studied the mechanical stability of poly-Si thin-film transistor on 50 μm-thick flexible metal foil with a field-effect mobility of 81.2 cm2/V s, a threshold voltage of -2.4 V, and an on/off current ratio of 106. We have measured the electrical properties under various compressive and tensile strains by changing the bending radius of the base metal foil. We have found that the TFT is stable until the bending radius of 50 mm which corresponds to the strain of ∼1.4%.

KW - Mechanical stability

KW - Metal foil

KW - Metal-induced crystallization with a nitride cap layer (MICC)

KW - Poly-Si thin-film transistor (TFT)

UR - https://www.scopus.com/pages/publications/38949171392

U2 - 10.1016/j.sse.2007.10.019

DO - 10.1016/j.sse.2007.10.019

M3 - Article

AN - SCOPUS:38949171392

SN - 0038-1101

VL - 52

SP - 473

EP - 477

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 3

ER -

Mechanical stability of poly-Si TFT on metal foil

Abstract

Keywords

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