Metal bonded carrier for high electron emission carbon nanotube emitters

Su Woong Lee; Young Ju Eom; Hae Na Won; Jung Su Gang; Jin Jang; K. C. Park

doi:10.1109/IVNC.2012.6316962

Metal bonded carrier for high electron emission carbon nanotube emitters

Su Woong Lee, Young Ju Eom, Hae Na Won, Jung Su Gang, Jin Jang, K. C. Park

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Citations (Scopus)

Abstract

We introduced the metal bonded silicon substrate as Al cathode for reduced contact resistance. The Si-Al was bonded in vacuum system with temperature of 570°C and 15 min annealing time. After eutectic bonding, the resistance is reduced to a couple of ohms. The resistance was reduce to one hundreds of initial value. The electron emission current increased after Si-Al bonding. And the stability of emission current of the eutectic bonded CNT emitter shows improved.

Original language	English
Title of host publication	Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012Om
Pages	346-347
Number of pages	2
DOIs	https://doi.org/10.1109/IVNC.2012.6316962
Publication status	Published - 2012
Event	25th International Vacuum Nanoelectronics Conference, IVNC 2012 - Jeju, Korea, Republic of Duration: 9 Jul 2012 → 13 Jul 2012

Publication series

Name	Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012

Conference

Conference	25th International Vacuum Nanoelectronics Conference, IVNC 2012
Country/Territory	Korea, Republic of
City	Jeju
Period	9/07/12 → 13/07/12

Keywords

CNT
RAP
eutectic bondong

Access to Document

10.1109/IVNC.2012.6316962

Cite this

Lee, S. W., Eom, Y. J., Won, H. N., Gang, J. S., Jang, J., & Park, K. C. (2012). Metal bonded carrier for high electron emission carbon nanotube emitters. In Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012Om (pp. 346-347). Article 6316962 (Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012). https://doi.org/10.1109/IVNC.2012.6316962

@inproceedings{52f65824dc1f4aa9b23909bf43312dec,

title = "Metal bonded carrier for high electron emission carbon nanotube emitters",

abstract = "We introduced the metal bonded silicon substrate as Al cathode for reduced contact resistance. The Si-Al was bonded in vacuum system with temperature of 570°C and 15 min annealing time. After eutectic bonding, the resistance is reduced to a couple of ohms. The resistance was reduce to one hundreds of initial value. The electron emission current increased after Si-Al bonding. And the stability of emission current of the eutectic bonded CNT emitter shows improved.",

keywords = "CNT, RAP, eutectic bondong",

author = "Lee, {Su Woong} and Eom, {Young Ju} and Won, {Hae Na} and Gang, {Jung Su} and Jin Jang and Park, {K. C.}",

year = "2012",

doi = "10.1109/IVNC.2012.6316962",

language = "English",

isbn = "9781467319812",

series = "Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012",

pages = "346--347",

booktitle = "Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012Om",

}

Lee, SW, Eom, YJ, Won, HN, Gang, JS, Jang, J & Park, KC 2012, Metal bonded carrier for high electron emission carbon nanotube emitters. in Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012Om., 6316962, Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012, pp. 346-347, 25th International Vacuum Nanoelectronics Conference, IVNC 2012, Jeju, Korea, Republic of, 9/07/12. https://doi.org/10.1109/IVNC.2012.6316962

Metal bonded carrier for high electron emission carbon nanotube emitters. / Lee, Su Woong; Eom, Young Ju; Won, Hae Na et al.
Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012Om. 2012. p. 346-347 6316962 (Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Metal bonded carrier for high electron emission carbon nanotube emitters

AU - Lee, Su Woong

AU - Eom, Young Ju

AU - Won, Hae Na

AU - Gang, Jung Su

AU - Jang, Jin

AU - Park, K. C.

PY - 2012

Y1 - 2012

N2 - We introduced the metal bonded silicon substrate as Al cathode for reduced contact resistance. The Si-Al was bonded in vacuum system with temperature of 570°C and 15 min annealing time. After eutectic bonding, the resistance is reduced to a couple of ohms. The resistance was reduce to one hundreds of initial value. The electron emission current increased after Si-Al bonding. And the stability of emission current of the eutectic bonded CNT emitter shows improved.

AB - We introduced the metal bonded silicon substrate as Al cathode for reduced contact resistance. The Si-Al was bonded in vacuum system with temperature of 570°C and 15 min annealing time. After eutectic bonding, the resistance is reduced to a couple of ohms. The resistance was reduce to one hundreds of initial value. The electron emission current increased after Si-Al bonding. And the stability of emission current of the eutectic bonded CNT emitter shows improved.

KW - CNT

KW - RAP

KW - eutectic bondong

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U2 - 10.1109/IVNC.2012.6316962

DO - 10.1109/IVNC.2012.6316962

M3 - Conference contribution

AN - SCOPUS:84869020616

SN - 9781467319812

T3 - Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012

SP - 346

EP - 347

BT - Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012Om

T2 - 25th International Vacuum Nanoelectronics Conference, IVNC 2012

Y2 - 9 July 2012 through 13 July 2012

ER -

Metal bonded carrier for high electron emission carbon nanotube emitters

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Keywords

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