Microscopic origin of light-induced changes in hydrogenated amorphous silicon

Jin Jang; Chang Geun Lee; Seung Chul Park; Choochon Lee

doi:10.1063/1.98539

Microscopic origin of light-induced changes in hydrogenated amorphous silicon

Jin Jang, Chang Geun Lee, Seung Chul Park, Choochon Lee

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9 Citations (Scopus)

Abstract

Light-induced changes in the stretching mode absorption of Si-H and Si-H₂ have been studied for hydrogenated amorphous silicon (a-Si:H) films. The absorption below 2000 cm^-1 decreases greatly, but a small change has been observed above 2100 cm^-1. The magnitude of the overall change increases as the substrate temperature is lowered and little change is observed for a-Si:H films deposited at above 200°C. The change in boron-doped a-Si:H is small compared with the undoped film deposited at the same substrate temperature. Based on experimental results, it is suggested that the hydrogen in the bulk of a-Si:H diffuses to the microvoids during light illumination.

Original language	English
Pages (from-to)	1673-1675
Number of pages	3
Journal	Applied Physics Letters
Volume	51
Issue number	21
DOIs	https://doi.org/10.1063/1.98539
Publication status	Published - 1987

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title = "Microscopic origin of light-induced changes in hydrogenated amorphous silicon",

abstract = "Light-induced changes in the stretching mode absorption of Si-H and Si-H2 have been studied for hydrogenated amorphous silicon (a-Si:H) films. The absorption below 2000 cm-1 decreases greatly, but a small change has been observed above 2100 cm-1. The magnitude of the overall change increases as the substrate temperature is lowered and little change is observed for a-Si:H films deposited at above 200°C. The change in boron-doped a-Si:H is small compared with the undoped film deposited at the same substrate temperature. Based on experimental results, it is suggested that the hydrogen in the bulk of a-Si:H diffuses to the microvoids during light illumination.",

author = "Jin Jang and Lee, {Chang Geun} and Park, {Seung Chul} and Choochon Lee",

year = "1987",

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pages = "1673--1675",

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T1 - Microscopic origin of light-induced changes in hydrogenated amorphous silicon

AU - Jang, Jin

AU - Lee, Chang Geun

AU - Park, Seung Chul

AU - Lee, Choochon

PY - 1987

Y1 - 1987

N2 - Light-induced changes in the stretching mode absorption of Si-H and Si-H2 have been studied for hydrogenated amorphous silicon (a-Si:H) films. The absorption below 2000 cm-1 decreases greatly, but a small change has been observed above 2100 cm-1. The magnitude of the overall change increases as the substrate temperature is lowered and little change is observed for a-Si:H films deposited at above 200°C. The change in boron-doped a-Si:H is small compared with the undoped film deposited at the same substrate temperature. Based on experimental results, it is suggested that the hydrogen in the bulk of a-Si:H diffuses to the microvoids during light illumination.

AB - Light-induced changes in the stretching mode absorption of Si-H and Si-H2 have been studied for hydrogenated amorphous silicon (a-Si:H) films. The absorption below 2000 cm-1 decreases greatly, but a small change has been observed above 2100 cm-1. The magnitude of the overall change increases as the substrate temperature is lowered and little change is observed for a-Si:H films deposited at above 200°C. The change in boron-doped a-Si:H is small compared with the undoped film deposited at the same substrate temperature. Based on experimental results, it is suggested that the hydrogen in the bulk of a-Si:H diffuses to the microvoids during light illumination.

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DO - 10.1063/1.98539

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EP - 1675

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 21

ER -

Microscopic origin of light-induced changes in hydrogenated amorphous silicon

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