Microscopic origin of light-induced changes in hydrogenated amorphous silicon

Jin Jang, Chang Geun Lee, Seung Chul Park, Choochon Lee

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


Light-induced changes in the stretching mode absorption of Si-H and Si-H2 have been studied for hydrogenated amorphous silicon (a-Si:H) films. The absorption below 2000 cm-1 decreases greatly, but a small change has been observed above 2100 cm-1. The magnitude of the overall change increases as the substrate temperature is lowered and little change is observed for a-Si:H films deposited at above 200°C. The change in boron-doped a-Si:H is small compared with the undoped film deposited at the same substrate temperature. Based on experimental results, it is suggested that the hydrogen in the bulk of a-Si:H diffuses to the microvoids during light illumination.

Original languageEnglish
Pages (from-to)1673-1675
Number of pages3
JournalApplied Physics Letters
Issue number21
Publication statusPublished - 1987


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