Microstructural and optical studies of multiply stacked CdSe/ZnSe quantum-dot structures with a large ZnSe spacer thickness

T. W. Kim; D. C. Choo; D. U. Lee; M. Jung; J. W. Cho; K. H. Yoo; S. Lee; K. Y. Seo; J. K. Furdyna

doi:10.1016/S0038-1098(02)00088-1

Microstructural and optical studies of multiply stacked CdSe/ZnSe quantum-dot structures with a large ZnSe spacer thickness

T. W. Kim
, D. C. Choo
, D. U. Lee
, M. Jung
, J. W. Cho
, K. H. Yoo
, S. Lee
, K. Y. Seo
, J. K. Furdyna

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Transmission electron microscopy images showed that multiply stacked CdSe quantum-dot (QD) arrays with a large ZnSe spacer thickness were embedded in the ZnSe barriers. The temperature-dependence photoluminescence (PL) spectra showed that the peak corresponding to the interband transitions from the ground electronic subband to the ground heavy-hole band of the CdSe QDs shifted to a lower energy side with increasing temperature and that the PL linewidth at high temperature increased with increasing temperature. The activation energy of the electrons confined in the CdSe QDs was as large as 100 meV. The present observation can help improve understanding of the microstructural and optical properties in multiply stacked CdSe/ZnSe QDs.

Original language	English
Pages (from-to)	229-232
Number of pages	4
Journal	Solid State Communications
Volume	122
Issue number	3-4
DOIs	https://doi.org/10.1016/S0038-1098(02)00088-1
Publication status	Published - Apr 2002

Bibliographical note

Funding Information:
This work was supported by the Korea Science and Engineering Foundation (KOSEF) Research Project No. R03-2001-00017.

Keywords

A. Nanostructures
C. Transmission electron microscopy
D. Optical properties

Access to Document

10.1016/S0038-1098(02)00088-1

Cite this

@article{969a35921d544d7993794685d8eb8f8d,

title = "Microstructural and optical studies of multiply stacked CdSe/ZnSe quantum-dot structures with a large ZnSe spacer thickness",

abstract = "Transmission electron microscopy images showed that multiply stacked CdSe quantum-dot (QD) arrays with a large ZnSe spacer thickness were embedded in the ZnSe barriers. The temperature-dependence photoluminescence (PL) spectra showed that the peak corresponding to the interband transitions from the ground electronic subband to the ground heavy-hole band of the CdSe QDs shifted to a lower energy side with increasing temperature and that the PL linewidth at high temperature increased with increasing temperature. The activation energy of the electrons confined in the CdSe QDs was as large as 100 meV. The present observation can help improve understanding of the microstructural and optical properties in multiply stacked CdSe/ZnSe QDs.",

keywords = "A. Nanostructures, C. Transmission electron microscopy, D. Optical properties",

author = "Kim, \{T. W.\} and Choo, \{D. C.\} and Lee, \{D. U.\} and M. Jung and Cho, \{J. W.\} and Yoo, \{K. H.\} and S. Lee and Seo, \{K. Y.\} and Furdyna, \{J. K.\}",

note = "Funding Information: This work was supported by the Korea Science and Engineering Foundation (KOSEF) Research Project No. R03-2001-00017. ",

year = "2002",

month = apr,

doi = "10.1016/S0038-1098(02)00088-1",

language = "English",

volume = "122",

pages = "229--232",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd.",

number = "3-4",

}

TY - JOUR

T1 - Microstructural and optical studies of multiply stacked CdSe/ZnSe quantum-dot structures with a large ZnSe spacer thickness

AU - Kim, T. W.

AU - Choo, D. C.

AU - Lee, D. U.

AU - Jung, M.

AU - Cho, J. W.

AU - Yoo, K. H.

AU - Lee, S.

AU - Seo, K. Y.

AU - Furdyna, J. K.

N1 - Funding Information: This work was supported by the Korea Science and Engineering Foundation (KOSEF) Research Project No. R03-2001-00017.

PY - 2002/4

Y1 - 2002/4

N2 - Transmission electron microscopy images showed that multiply stacked CdSe quantum-dot (QD) arrays with a large ZnSe spacer thickness were embedded in the ZnSe barriers. The temperature-dependence photoluminescence (PL) spectra showed that the peak corresponding to the interband transitions from the ground electronic subband to the ground heavy-hole band of the CdSe QDs shifted to a lower energy side with increasing temperature and that the PL linewidth at high temperature increased with increasing temperature. The activation energy of the electrons confined in the CdSe QDs was as large as 100 meV. The present observation can help improve understanding of the microstructural and optical properties in multiply stacked CdSe/ZnSe QDs.

AB - Transmission electron microscopy images showed that multiply stacked CdSe quantum-dot (QD) arrays with a large ZnSe spacer thickness were embedded in the ZnSe barriers. The temperature-dependence photoluminescence (PL) spectra showed that the peak corresponding to the interband transitions from the ground electronic subband to the ground heavy-hole band of the CdSe QDs shifted to a lower energy side with increasing temperature and that the PL linewidth at high temperature increased with increasing temperature. The activation energy of the electrons confined in the CdSe QDs was as large as 100 meV. The present observation can help improve understanding of the microstructural and optical properties in multiply stacked CdSe/ZnSe QDs.

KW - A. Nanostructures

KW - C. Transmission electron microscopy

KW - D. Optical properties

UR - https://www.scopus.com/pages/publications/0036531638

U2 - 10.1016/S0038-1098(02)00088-1

DO - 10.1016/S0038-1098(02)00088-1

M3 - Article

AN - SCOPUS:0036531638

SN - 0038-1098

VL - 122

SP - 229

EP - 232

JO - Solid State Communications

JF - Solid State Communications

IS - 3-4

ER -

Microstructural and optical studies of multiply stacked CdSe/ZnSe quantum-dot structures with a large ZnSe spacer thickness

Abstract

Bibliographical note

Keywords

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