Microstructural properties of Co thin films grown on p-GaAs (1 0 0) Substrates

K. H. Lee; H. S. Lee; J. Y. Lee; T. W. Kim; K. H. Yoo; Y. S. Yoon

doi:10.1016/j.materresbull.2004.04.036

Microstructural properties of Co thin films grown on p-GaAs (1 0 0) Substrates

K. H. Lee
, H. S. Lee
, J. Y. Lee
, T. W. Kim
, K. H. Yoo
, Y. S. Yoon

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Microstructural properties of Co thin films grown on p-GaAs (100) substrates at room temperature by ion beam-assisted deposition were investigated. An atomic force microscopy image showed that the root mean square of the average surface roughness of the Co film was 32.2Å, and X-ray diffraction and selected area diffraction pattern measurements showed that Co film layers grown on GaAs (100) substrates were polycrystalline. A bright-field transmission electron microscopy image showed that the Co/p-GaAs (100) heterointerface grown at room temperature was sudden. These results provide important information on the microstructural properties for Co thin films grown on p-GaAs (100) substrates at room temperature.

Original language	English
Pages (from-to)	1369-1374
Number of pages	6
Journal	Materials Research Bulletin
Volume	39
Issue number	10
DOIs	https://doi.org/10.1016/j.materresbull.2004.04.036
Publication status	Published - 3 Aug 2004

Bibliographical note

Funding Information:
The work at the Korea Advanced Institute of Science and Technology was supported by the Ministry of Science and Technology through the National Research Laboratory program, and the work at Hanyang University was supported by the Korean Science and Engineering Foundation through the Quantum-functional Semiconductor Research Center at Dongguk University.

Keywords

A. Thin films
D. Microsturucture

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10.1016/j.materresbull.2004.04.036

Cite this

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title = "Microstructural properties of Co thin films grown on p-GaAs (1 0 0) Substrates",

abstract = "Microstructural properties of Co thin films grown on p-GaAs (100) substrates at room temperature by ion beam-assisted deposition were investigated. An atomic force microscopy image showed that the root mean square of the average surface roughness of the Co film was 32.2{\AA}, and X-ray diffraction and selected area diffraction pattern measurements showed that Co film layers grown on GaAs (100) substrates were polycrystalline. A bright-field transmission electron microscopy image showed that the Co/p-GaAs (100) heterointerface grown at room temperature was sudden. These results provide important information on the microstructural properties for Co thin films grown on p-GaAs (100) substrates at room temperature.",

keywords = "A. Thin films, D. Microsturucture",

author = "Lee, \{K. H.\} and Lee, \{H. S.\} and Lee, \{J. Y.\} and Kim, \{T. W.\} and Yoo, \{K. H.\} and Yoon, \{Y. S.\}",

note = "Funding Information: The work at the Korea Advanced Institute of Science and Technology was supported by the Ministry of Science and Technology through the National Research Laboratory program, and the work at Hanyang University was supported by the Korean Science and Engineering Foundation through the Quantum-functional Semiconductor Research Center at Dongguk University.",

year = "2004",

month = aug,

day = "3",

doi = "10.1016/j.materresbull.2004.04.036",

language = "English",

volume = "39",

pages = "1369--1374",

journal = "Materials Research Bulletin",

issn = "0025-5408",

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TY - JOUR

T1 - Microstructural properties of Co thin films grown on p-GaAs (1 0 0) Substrates

AU - Lee, K. H.

AU - Lee, H. S.

AU - Lee, J. Y.

AU - Kim, T. W.

AU - Yoo, K. H.

AU - Yoon, Y. S.

N1 - Funding Information: The work at the Korea Advanced Institute of Science and Technology was supported by the Ministry of Science and Technology through the National Research Laboratory program, and the work at Hanyang University was supported by the Korean Science and Engineering Foundation through the Quantum-functional Semiconductor Research Center at Dongguk University.

PY - 2004/8/3

Y1 - 2004/8/3

N2 - Microstructural properties of Co thin films grown on p-GaAs (100) substrates at room temperature by ion beam-assisted deposition were investigated. An atomic force microscopy image showed that the root mean square of the average surface roughness of the Co film was 32.2Å, and X-ray diffraction and selected area diffraction pattern measurements showed that Co film layers grown on GaAs (100) substrates were polycrystalline. A bright-field transmission electron microscopy image showed that the Co/p-GaAs (100) heterointerface grown at room temperature was sudden. These results provide important information on the microstructural properties for Co thin films grown on p-GaAs (100) substrates at room temperature.

AB - Microstructural properties of Co thin films grown on p-GaAs (100) substrates at room temperature by ion beam-assisted deposition were investigated. An atomic force microscopy image showed that the root mean square of the average surface roughness of the Co film was 32.2Å, and X-ray diffraction and selected area diffraction pattern measurements showed that Co film layers grown on GaAs (100) substrates were polycrystalline. A bright-field transmission electron microscopy image showed that the Co/p-GaAs (100) heterointerface grown at room temperature was sudden. These results provide important information on the microstructural properties for Co thin films grown on p-GaAs (100) substrates at room temperature.

KW - A. Thin films

KW - D. Microsturucture

UR - https://www.scopus.com/pages/publications/3042853799

U2 - 10.1016/j.materresbull.2004.04.036

DO - 10.1016/j.materresbull.2004.04.036

M3 - Article

AN - SCOPUS:3042853799

SN - 0025-5408

VL - 39

SP - 1369

EP - 1374

JO - Materials Research Bulletin

JF - Materials Research Bulletin

IS - 10

ER -

Microstructural properties of Co thin films grown on p-GaAs (1 0 0) Substrates

Abstract

Bibliographical note

Keywords

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