Microstructure of femtosecond laser-induced grating in amorphous silicon

Geon Joon Lee; Jisun Park; Eun Kyu Kim; Young Pak Lee; Kyung Moon Kim; Hyeonsik Cheong; Chong Seung Yoon; Yong Duck Son; Jin Jang

doi:10.1364/OPEX.13.006445

Microstructure of femtosecond laser-induced grating in amorphous silicon

Geon Joon Lee, Jisun Park, Eun Kyu Kim, Young Pak Lee, Kyung Moon Kim, Hyeonsik Cheong, Chong Seung Yoon, Yong Duck Son, Jin Jang

Research output: Contribution to journal › Review article › peer-review

25 Citations (Scopus)

Abstract

The femtosecond laser-induced grating (FLIG) formation and crystallization were investigated in amorphous silicon (a-Si) films, prepared on glass by plasma-enhanced chemical-vapor deposition. Probe-beam diffraction, micro-Raman spectroscopy, atomic force microscopy, scanning electron microscopy, and transmission electron microscopy were employed to characterize the diffraction properties and the microstructures of FLIGs. It was found that i) the FLIG can be regarded as a pattern of alternating a-Si and microcrystalline-silicon (μc-Si) lines with a period of about 2 μm, and ii) efficient grating formation and crystallization were achieved by high-intensity recording with a short writing period.

Original language	English
Pages (from-to)	6445-6453
Number of pages	9
Journal	Optics Express
Volume	13
Issue number	17
DOIs	https://doi.org/10.1364/OPEX.13.006445
Publication status	Published - 22 Aug 2005

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title = "Microstructure of femtosecond laser-induced grating in amorphous silicon",

abstract = "The femtosecond laser-induced grating (FLIG) formation and crystallization were investigated in amorphous silicon (a-Si) films, prepared on glass by plasma-enhanced chemical-vapor deposition. Probe-beam diffraction, micro-Raman spectroscopy, atomic force microscopy, scanning electron microscopy, and transmission electron microscopy were employed to characterize the diffraction properties and the microstructures of FLIGs. It was found that i) the FLIG can be regarded as a pattern of alternating a-Si and microcrystalline-silicon (μc-Si) lines with a period of about 2 μm, and ii) efficient grating formation and crystallization were achieved by high-intensity recording with a short writing period.",

author = "Lee, {Geon Joon} and Jisun Park and Kim, {Eun Kyu} and Lee, {Young Pak} and Kim, {Kyung Moon} and Hyeonsik Cheong and Yoon, {Chong Seung} and Son, {Yong Duck} and Jin Jang",

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AU - Lee, Geon Joon

AU - Park, Jisun

AU - Kim, Eun Kyu

AU - Lee, Young Pak

AU - Kim, Kyung Moon

AU - Cheong, Hyeonsik

AU - Yoon, Chong Seung

AU - Son, Yong Duck

AU - Jang, Jin

PY - 2005/8/22

Y1 - 2005/8/22

N2 - The femtosecond laser-induced grating (FLIG) formation and crystallization were investigated in amorphous silicon (a-Si) films, prepared on glass by plasma-enhanced chemical-vapor deposition. Probe-beam diffraction, micro-Raman spectroscopy, atomic force microscopy, scanning electron microscopy, and transmission electron microscopy were employed to characterize the diffraction properties and the microstructures of FLIGs. It was found that i) the FLIG can be regarded as a pattern of alternating a-Si and microcrystalline-silicon (μc-Si) lines with a period of about 2 μm, and ii) efficient grating formation and crystallization were achieved by high-intensity recording with a short writing period.

AB - The femtosecond laser-induced grating (FLIG) formation and crystallization were investigated in amorphous silicon (a-Si) films, prepared on glass by plasma-enhanced chemical-vapor deposition. Probe-beam diffraction, micro-Raman spectroscopy, atomic force microscopy, scanning electron microscopy, and transmission electron microscopy were employed to characterize the diffraction properties and the microstructures of FLIGs. It was found that i) the FLIG can be regarded as a pattern of alternating a-Si and microcrystalline-silicon (μc-Si) lines with a period of about 2 μm, and ii) efficient grating formation and crystallization were achieved by high-intensity recording with a short writing period.

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Microstructure of femtosecond laser-induced grating in amorphous silicon

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